mt3s106fs TOSHIBA Semiconductor CORPORATION, mt3s106fs Datasheet

mt3s106fs

Manufacturer Part Number

mt3s106fs

Description

Toshiba Transistor Silicon-germanium Npn Epitaxial Planer Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.MT3S106FS.pdf (5 pages)

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VCO OSCILLETOR STAGE

VHF-UHF Low Noise Amplifier Application

FEATURES

•

Marking

Absolute Maximum Ratings

Note 1: Device mounted on a glass-epoxy PCB(1.0 cm

Low Noise Figure :NF=1.2dB (@f=2GHz)

High Gain:|S21e|

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Current

Base-Current

Collector Power dissipation

Junction temperature

Storage temperature Range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE

Characteristics

4 1

=10dB (@f=2GHz)

(Ta = 25°C)

MT3S106FS

Symbol

(Note 1)

CBO

CEO

EBO

stg

−55~150

Rating

100

150

x 1.0 mm (t))

Unit

°C

Weight: 0.0006 g

JEDEC

JEITA

TOSHIBA

fSM

0.1±0.05

1.BASE

2.EMITTER

3.COLLECTOR

MT3S106FS

1.0±0.05

0.8±0.05

0.1±0.05

2-1E1A

2007-11-01

Unit:mm

Related parts for mt3s106fs

mt3s106fs Summary of contents

Page 1

... Unit CBO CEO EBO (Note 1) 100 150 ° −55~150 °C stg 2 x 1.0 mm (t)) 1 MT3S106FS Unit:mm 1.0±0.05 0.8±0. 0.1±0.05 0.1±0.05 1.BASE 2.EMITTER 3.COLLECTOR fSM JEDEC - JEITA - TOSHIBA 2-1E1A Weight: 0.0006 g 2007-11-01 ...

Page 2

... CE C (Ta = 25°C) Symbol Test Condition I V =5V CBO =1V EBO EB C hFE V =1V, I =5mA =1V, I =0, f=1MHz (Note ) MT3S106FS Min Typ. Max Unit 6.5 8.5 - GHz - 8 1 Min Typ. Max Unit - - 0.1 µ 0.5 µA 110 ...

Page 3

... Collector-current f=2GHz Ta=25° 0 (V) Collector-current I 1.5 f=1MHz Ta=25°C 1 0.5 0 100 0.1 Collector-base voltage V 3 MT3S106FS 100 (mA 21e C VCE=3V VCE=1V 10 100 (mA Cob Cre 1 10 (V) CB 2007-11-01 ...

Page 4

... Ta=25° Collector-current I (mA) C 150 15 The device is mounted on a glass-epoxy printed circuit board 125 (1.0cm2 X 1mm(t)) 100 Device only 100 Ambient temperature T 4 MT3S106FS 100 125 150 175 (℃) a 2007-11-01 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 MT3S106FS 20070701-EN GENERAL 2007-11-01 ...

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