tm1300 NXP Semiconductors, tm1300 Datasheet - Page 182
tm1300
Manufacturer Part Number
tm1300
Description
Tm-1300 Media Processor
Manufacturer
NXP Semiconductors
Datasheet
1.TM1300.pdf
(533 pages)
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TM1300 Data Book
and a T
words the following equation needs to be met:
Where T
MM_CLK1, and T
in
12.16.1 Main AC Parameter requirements
The TM1300 SDRAM interface was designed to support
a wide range of SDRAM vendors.
some of the minimum SDRAM AC requirements for
TM1300 to operate correctly. The symbols or names are
not really standardized and may differ from one vendor
to another one. The table is not meant to be exhaustive
and shows only the main parameters. Parameters are
expressed in clock cycles rather than ns.
Table 12-13. Minimum AC Parameters
12-8
ACTIVE command period
ACTIVE to PRECHARGE command
PRECHARGE command period
Figure 12-5. Schematic of a 4-MB memory system consisting of two 2 512K 16 SDRAM chips (one rank).
T
Section 1.9.4.7 on page
cycle
SU
CS
for TM1300 less or equal than 0.4 ns. In other
t
AC
is the skew between MM_CLK0 and
Description
+
T
SU
board
the input data setup time as defined
+
PRODUCT SPECIFICATION
T
1-15.
CS
+
T
Table 12-13
MM_CLK[1]
MM_CS#[0]
MM_CLK[0]
MM_CS#[0]
SU
t
t
t
.
Symbol Clocks
RC
RAS
RP
describes
CLK
Address
Control
CS#
CLK
Address
Control
CS#
10
2 512K 16
2 512K 16
7
3
TM1300
SDRAM
SDRAM
DQ[15:0]
DQ[15:0]
UDQM
UDQM
LDQM
LDQM
Table 12-13. Minimum AC Parameters
12.17 EXAMPLE BLOCK DIAGRAMS
Figures 112-5 through 12-10 illustrate some of the pos-
sible memory configurations that can be built with
TM1300. For all the following schemes MM_A[12:11]
when used as bank addresses, are interchangeable (i.e.
it does not matter whether one is connected to Bank 1 or
Bank 0.).
12.17.1 16-Mbit Devices or Less
These devices allow small memory configurations to be
built. They are described in the TM1000 and TM1100 da-
tabooks.
12.17.2 64-Mbit Devices
64-Mbit SDRAMs organized in x16 can be used to build
a 16-, 32-, 48- or 64-MB memory systems.
ACTIVE Bank A to ACTIVE bank B
ACTIVE to READ or WRITE command
WRITE recovery time
MM_DQ[31:16]
Figure 12-5
MM_DQ[15:0]
MM_DQM[3]
MM_DQM[2]
MM_DQM[1]
MM_DQM[0]
Description
shows a 4-MB memory system.
Philips Semiconductors
t
t
t
Symbol Clocks
RRD
RCD
WR
Figure 12-6
3
3
2
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