mt48lc16m8a2tg-75-it Micron Semiconductor Products, mt48lc16m8a2tg-75-it Datasheet - Page 48

• Manufacturer Part Number: mt48lc16m8a2tg-75-it
• Description: 128mb X4, X8, X16 Sdram
• Manufacturer: Micron Semiconductor Products

Table 14:
Table 15:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. M 10/07 EN
Parameter/Condition
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current: Any input 0V ≤ V
pins not under test = 0V)
Output leakage current: DQ are disabled; 0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
Operating current: Active mode;
Burst = 2; READ or WRITE;
Standby current: Power-down mode;
All banks idle; CKE = LOW
Standby current: Active mode;
CKE = HIGH; CS# = HIGH; All banks active after
accesses in progress
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
Auto refresh current:
CKE = HIGH; CS# = HIGH
Self refresh current:
CKE ≤ 0.2V
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 51; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 51; V
DD
Specifications and Conditions
OUT
OUT
= 4mA)
= –4mA)
t
RC =
t
RC (MIN)
IN
≤ V
DD
t
t
Standard
Low power (L)
RFC =
RFC = 15.625µs
t
RCD met; No
(All other
OUT
≤ V
t
RFC (MIN)
DD
DD
/V
Q
48
DD
Q = +3.3 ±0.3V
DD
V
/V
Symbol
DD
Symbol
DD
V
V
V
I
V
/V
OZ
I
I
I
I
I
I
I
I
OH
I
OL
IH
Q = +3.3 ±0.3V
DD
DD
DD
DD
DD
DD
DD
DD
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
1
2
3
4
5
6
7
7
Q
-6A
170
165
330
50
Min
–0.3
2
3
2
–
2.4
–5
–5
3
2
–
128Mb: x4, x8, x16 SDRAM
Max
160
165
330
-7E
50
2
3
2
1
Electrical Specifications
V
DD
Max
3.6
0.8
0.4
5
5
–
+ 0.3
©1999 Micron Technology, Inc. All rights reserved.
150
150
310
-75
50
2
3
2
1
Units
µA
µA
V
V
V
V
V
Units
mA
mA
mA
mA
mA
mA
mA
mA
Notes
18, 19,
Notes
19, 32
19, 32
19, 32
32, 33
3, 18,
3, 12,
3, 18,
3, 12,
22
22
32
4