mt46v128m4bn Micron Semiconductor Products, mt46v128m4bn Datasheet - Page 67

• Manufacturer Part Number: mt46v128m4bn
• Description: 512mb X4, X8, X16 Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 39:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. L; Core DDR Rev. A 4/07 EN
Consecutive WRITE-to-WRITE
Notes:
t
DQSS (NOM)
COMMAND
ADDRESS
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t
DQSS
NOP
DI
T1
b
67
T1n
WRITE
Bank,
Col n
T2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T2n
512Mb: x4, x8, x16 DDR SDRAM
T3
NOP
DI
n
DON’T CARE
T3n
©2000 Micron Technology, Inc. All rights reserved.
T4
NOP
TRANSITIONING DATA
T4n
Operations
T5
NOP