mt4lc4m4e8tg-6-s Micron Semiconductor Products, mt4lc4m4e8tg-6-s Datasheet - Page 7

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mt4lc4m4e8tg-6-s

Manufacturer Part Number
mt4lc4m4e8tg-6-s
Description
16mb Edo Mt4lc4m4e8dj-5
Manufacturer
Micron Semiconductor Products
Datasheet
CAPACITANCE
AC ELECTRICAL CHARACTERISTICS
(Notes: 2, 3, 9, 10, 11, 12) (V
4 Meg x 4 EDO DRAM
D47.p65 – Rev. 6/98
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column-address setup to CAS# precharge
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# LOW to “Don’t Care” during Self Refresh
CAS# hold time (CBR Refresh)
CAS# to output in Low-Z
Data output hold after next CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
OE# HIGH hold from CAS# HIGH
OE# HIGH pulse width
OE# LOW to CAS# HIGH setup time
Output buffer turn-off delay
PARAMETER
Input Capacitance: Address pins
Input Capacitance: RAS#, CAS#, WE#, OE#
Input/Output Capacitance: DQ
DD
= +3.3V ± 0.3V)
SYMBOL
t
t
OEHC
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AWD
t
CWD
CHD
CHR
COH
CWL
OEH
ACH
ASC
ASR
CAC
CAH
CAS
CPA
CRP
CSH
CSR
OEP
OES
CLZ
t
t
t
OFF
t
t
t
t
OD
AA
AR
CP
DH
DS
OE
7
MIN
12
38
42
15
38
28
0
0
8
8
8
0
3
8
5
5
8
8
0
0
8
5
5
4
0
-5
10,000
MAX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
25
13
28
12
12
12
SYMBOL
C
MIN
C
C
15
45
49
10
10
15
10
10
45
35
10
10
10
10
0
0
0
3
5
5
0
0
5
5
0
IO
I
I
1
2
-6
10,000
MAX
MAX
30
15
35
15
15
15
5
7
7
EDO DRAM
4 MEG x 4
UNITS
UNITS
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1998, Micron Technology, Inc.
NOTES
NOTES
13
14
15
13
16
16
17
18
18
20
8
8
8
7

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