mt45w4mw16p Micron Semiconductor Products, mt45w4mw16p Datasheet - Page 23

• Manufacturer Part Number: mt45w4mw16p
• Description: Async/page Cellularramtm 1.0 Memory
• Manufacturer: Micron Semiconductor Products

Table 12:
PDF: 09005aef80be1ee8/Source: 09005aef80be1f7f
AsyncCellularRAM_2.fm - Rev. G 10/05 EN
Parameter
Address Setup Time
Address Valid to End of Write
Byte Select to End of Write
CE# HIGH Time During Write
Chip Enable to End of Write
Data Hold from Write Time
Data Write Setup Time
Chip Enable to Low-Z Output
End Write to Low-Z Output
Write Cycle Time
Write to High-Z Output
Write Pulse Width
Write Pulse Width HIGH
Write Recovery Time
WRITE Cycle Timing Requirements
Notes: 1. High-Z to Low-Z timings are tested with the circuit shown in Figure 15 on page 21. The
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 15 on page 21. The
3. WE# LOW time must be limited to
Low-Z timings measure a 100mV transition away from the High-Z (V
either V
High-Z timings measure a 100mV transition from either V
OH
or V
64Mb: 4 Meg x 16 Async/Page CellularRAM 1.0 Memory
OL
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AS
AW
BW
CPH
CW
DH
DW
LZ
OW
WC
WHZ
WP
WPH
WR
.
23
Min
70
70
70
23
10
70
46
10
0
5
0
5
0
t
CEM (8µs).
-70
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Max
8
Min
85
85
85
25
10
85
50
10
0
5
0
5
0
Electrical Characteristics
OH
-85
or V
©2003 Micron Technology, Inc. All rights reserved.
Max
OL
8
toward V
CC
Q/2) level toward
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
1
1
2
3