mt4jtf6464ay-1g1 Micron Semiconductor Products, mt4jtf6464ay-1g1 Datasheet

no-image

mt4jtf6464ay-1g1

Manufacturer Part Number
mt4jtf6464ay-1g1
Description
512mb X64, Sr 240-pin Ddr3 Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR3 SDRAM UDIMM
MT4JTF6464AY – 512MB
For component data sheets, refer to Micron’s Web site:
Features
• DDR3 functionality and operations supported as per
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC3-10600, PC3-8500,
• 512MB (64 Meg x 64)
• V
• V
• Reset pin for improved system stability
• Nominal and dynamic on-die termination (ODT) for
• Single rank
• 8 internal device banks for concurrent operation
• Fixed burst length of 8 (BL8) and burst chop of
• Adjustable data-output drive strength
• Serial presence-detect (SPD) EEPROM
• Gold edge contacts
• Pb-free
• Fly-by topology
• Terminated command, address, and control bus
Table 1:
PDF:09005aef82b2263f/Source:09005aef82b22627
JTF4C_64x64AY.fm - Rev. A 7/07 EN
component data sheet
(UDIMM)
or PC3-6400
data, strobe, and mask signals
4 (BC4) via the mode register
Speed
Grade
-1G4
-1G3
-1G1
-1G0
-80C
-80B
DD
DDSPD
= V
DD
= +3.0V to +3.6V
Nomenclature
Q = +1.5V ±.075V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
PC3-10600
PC3-10600
Industry
PC3-8500
PC3-8500
PC3-6400
PC3-6400
CL = 10 CL = 9
1333
1333
1066
Data Rate (MT/s)
CL = 8
1066
1066
800
www.micron.com
512MB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
CL = 7
1066
1
800
800
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Frequency/CAS latency
PCB height: 30mm (1.18in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.5ns @ CL = 10 (DDR3-1333)
– 1.87ns @ CL = 7 (DDR3-1066)
– 1.87ns @ CL = 8 (DDR3-1066)
– 2.5ns @ CL = 5 (DDR3-800)
– 2.5ns @ CL = 6 (DDR3-800)
CL = 6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
800
800
module offerings.
CL = 5
240-Pin UDIMM (MO-269 R/C C)
800
13.125
t
A
A
(ns)
13.5
12.5
RCD
1
15
15
15
≤ +85°C)
≤ +70°C)
©2007 Micron Technology, Inc. All rights reserved.
13.125
(ns)
13.5
12.5
t
15
15
15
RP
Marking
Features
None
-1G4
-1G3
-1G1
-1G0
-80C
-80B
I
50.625
(ns)
49.5
52.5
52.5
t
51
50
RC

Related parts for mt4jtf6464ay-1g1

mt4jtf6464ay-1g1 Summary of contents

Page 1

... DDR3 SDRAM UDIMM MT4JTF6464AY – 512MB For component data sheets, refer to Micron’s Web site: Features • DDR3 functionality and operations supported as per component data sheet • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC3-10600, PC3-8500, or PC3-6400 • ...

Page 2

... Notes: 1. Data sheets for the base device parts can be found on Micron’s Web site. 2. All numbers end with a two-place code (not shown), designating component and PCB revi- sions. Consult factory for current revision codes. Example: MT4JTF6464AY-1G1B1. PDF:09005aef82b2263f/Source:09005aef82b22627 JTF4C_64x64AY.fm - Rev. A 7/07 EN 512MB (x64, SR) 240-Pin DDR3 SDRAM UDIMM ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignment 240-Pin UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ25 61 V REF ...

Page 4

Table 5: Pin Descriptions Symbol Type A0–A12 Input Address inputs: Provide the row address for ACTIVE commands and the column address and auto precharge bit for READ/WRITE commands to select one location out of the memory array in the respective ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0 # DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 V SS DQS2# DQS2 DM2 DQ16 DQ17 DQ18 ...

Page 6

... General Description The MT4JTF6464AY DDR3 SDRAM module is a high-speed, CMOS, dynamic random- access 512MB memory module organized in a x64 configuration. This DDR3 SDRAM module uses an internally configured 8-bank (1Gb) DDR3 SDRAM device. DDR3 SDRAM modules use double data rate architecture to achieve high-speed opera- tion ...

Page 7

Electrical Specifications Stresses greater than those listed in Table 6, may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in the ...

Page 8

Table 8: Module and Component Speed Grades DDR3 components must be able to meet or exceed the listed speed grade. Module Speed Grade -1G4 -1G3 -1G1 -1G0 -80C -80B I Specifications DD Table 9: DDR3 I Specifications and Conditions – ...

Page 9

Serial Presence-Detect Table 10: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input ...

Page 10

Table 12: Serial Presence-Detect Matrix Byte 0 CRC coverage EEPROM device size Number of SPD bytes written 1 SPD revision 2 DRAM device type (technology) 3 Module type (form factor) 4 SDRAM device density and internal banks 5 SDRAM device ...

Page 11

Table 12: Serial Presence-Detect Matrix (continued) Byte 23 MIN active-to-active/refresh ( 24 MIN refresh recovery delay time ( 25 MIN refresh recovery delay time ( 26 MIN internal WRITE-to-READ command delay time ( 27 MIN internal READ-to-PRECHARGE command delay time ...

Page 12

Module Dimensions Figure 3: 240-Pin DDR3 UDIMM 0.75 (0.03) R (8X 2.50 (0.098) D (2X) 2.30 (0.091) TYP PIN 1 2.20 (0.087) TYP 1.45 (0.057) TYP 54.68 (2.15) TYP 3.05 (0.12) TYP PIN 240 Notes: 1. All dimensions ...

Related keywords