mt4jtf6464ay-1g1 Micron Semiconductor Products, mt4jtf6464ay-1g1 Datasheet - Page 8

• Manufacturer Part Number: mt4jtf6464ay-1g1
• Description: 512mb X64, Sr 240-pin Ddr3 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 8:
I
Table 9:
PDF:09005aef82b2263f/Source:09005aef82b22627
JTF4C_64x64AY.fm - Rev. A 7/07 EN
Parameter
Operating current 0: One bank ACTIVATE-to-PRECHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
Precharge power down current: Slow exit
Precharge power down current: Fast exit
Precharge quiet standby current
Precharge standby current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self-refresh temperature current (SRT-enabled): MAX T
Self-refresh temperature current: MAX T
All bank interleaved read current
DD
Specifications
Module and Component Speed Grades
DDR3 components must be able to meet or exceed the listed speed grade.
DDR3 I
Values shown for each data rate are for the MT41J64M16 DDR3 SDRAM only and are computed from values
specified in the 1Gb (64 Meg x 16) component data sheet
Module Speed Grade
DD
Specifications and Conditions – 512MB
-1G4
-1G3
-1G1
-1G0
-80C
-80B
C
= 85°C
C
= 95°C
512MB (x64, SR) 240-Pin DDR3 SDRAM UDIMM
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Component Speed Grade
Symbol
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
DD
DD
DD
I
I
DD
DD
DD
DD
6ET
4W
2Q
2N
3N
2P
2P
3P
4R
5B
0
1
6
7
Electrical Specifications
-187E
-15E
-187
-25E
-15
-25
1,320
1,600
1,160
2,780
1333
620
780
100
280
300
220
380
©2007 Micron Technology, Inc. All rights reserved.
40
36
24
1067
1,120
1,400 1,200
1,020
2,660 2,540
560
700
100
240
260
180
320
40
36
24
800
480
620
100
200
220
160
260
920
860
40
36
24
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA