tda8357j-n2 NXP Semiconductors, tda8357j-n2 Datasheet - Page 6

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tda8357j-n2

Manufacturer Part Number
tda8357j-n2
Description
Full Bridge Vertical Deflection Output Circuit In Lvdmos
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
CHARACTERISTICS
V
specified.
2002 May 06
Supplies
V
V
I
I
I
Inputs INA and INB
V
V
I
Outputs OUTA and OUTB
V
V
I
LE
V
V
G
f
G
PSRR
SYMBOL
P(q)(av)
P(q)
FB(q)(av)
I(bias)
o(p-p)
P
V
G
P
FB
i(p-p)
I(bias)
loss(1)
loss(2)
offset
O
3dB(h)
Full bridge vertical deflection output circuit
in LVDMOS
v(ol)
v
= 12 V; V
offset(T)
v(T)
FB
operating supply voltage
flyback supply voltage
average quiescent supply current
quiescent supply current
average quiescent flyback supply
current
input voltage (peak-to-peak value)
input bias voltage
input bias current
voltage loss first scan part
voltage loss second scan part
output current (peak-to-peak value)
linearity error
offset voltage across R
offset voltage across R
with temperature
DC output voltage
open-loop voltage gain
high 3 dB cut-off frequency
voltage gain
voltage gain variation with
temperature
power supply rejection ratio
= 45 V; f
vert
PARAMETER
= 50 Hz; V
M
M
; variation
I(bias)
= 880 mV; T
note 1
during scan
no signal; no load
during scan
note 2
note 2
source current
note 3
note 4
I
V
V
V
notes 7 and 8
open loop
note 9
note 10
o(p-p)
i(dif)
i(dif)
i(dif)
I
I
I
I
adjacent blocks
non adjacent blocks
V
V
o
o
o
o
I(bias)
I(bias)
amb
= 0.7 A
= 1.0 A
= 0.7 A
= 1.0 A
= 0 V
= 0 V
= 0 V
= 2.0 A; notes 5 and 6
CONDITIONS
6
= 25 C; measured in test circuit of Fig.3; unless otherwise
= 200 mV
= 1 V
7.5
2
100
80
MIN.
V
P
12
45
10
30
1000
880
25
1
1
0.5
60
1
1
90
TYP.
Product specification
V
P
TDA8357J
18
66
15
65
10
1500
1600
35
3.9
5.5
2.8
4.0
2.0
2
3
40
10
15
25
MAX.
4
UNIT
V
V
mA
mA
mA
mV
mV
V
V
V
V
A
%
%
mV
mV
V
dB
kHz
K
dB
A
V/K
1

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