tda5153x NXP Semiconductors, tda5153x Datasheet - Page 21
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tda5153x
Manufacturer Part Number
tda5153x
Description
Pre-amplifier Hard Disk Drive With Mr-read/inductive Write Heads
Manufacturer
NXP Semiconductors
Datasheet
1.TDA5153X.pdf
(28 pages)
Philips Semiconductors
Notes to the characteristics
1. The differential voltage gain depends on the MR
2. The gain boost implements a pole-zero combination:
3. Noise calculation
1997 Jul 02
t
t
t
t
DC characteristics
I
I
I
I
V
st(W)
off(W)
sw(W)
sw(S)
CC(R)
CC(W)
DD(stb)
DD(S)
SYMBOL
ref
Pre-amplifier for Hard Disk Drive (HDD)
with MR-read/inductive write heads
resistance. It can be improved by programming the
d4 bit in the configuration register using the serial
interface.
The +3 dB gain boost corner frequency is
The 3 dB gain attenuation corner frequency is
where d3, d2, d1, d0 are bits (0, 1) to be programmed
via the Serial Interface. In practical use, the bandwidth
is limited by the inductance of the connection between
the MR heads and the pre-amplifier.
a) Definitions: The amplifier has a low-ohmic input.
-------------------------------------------------------------------------------------
-------------------------------------------------------------------------------------
8 d3
8 d3
No lead resistance is taken into account. The input
referred noise voltage, excluding the noise of the
MR resistors, is defined as follows:
where G
voltage at the output of the amplifier, k is the
V
nir
2
+
+
=
4 d2
4 d2
write settle times; note 12
write amplifier off time
head switching (in write mode),
and standby to write head active
sleep to (and from) any other
modes
supply current; note 13
supply current; note 14
standby mode supply current
sleep mode supply current
reference voltage for R
v
800 MHz
800 MHz
V
-------- -
is the voltage gain and V
G
no
v
+
+
2 d1
2 d1
2
–
PARAMETER
4kT
+
+
1 d0
1 d0
R
MR1
ext
+
R
no
MR2
is the noise
V
from 50%of the falling edge of
R/W to 90% of the steady state
write current (in Write Mode)
from rising edge of R/W to
I
(I
from falling edge of SEN to
write head active
read mode; I
write mode; I
static
WR
WR
from V
from V
-programmed /10
= 35 mA)
21
CONDITIONS
CC
CC(WD)
4. The channel separation is defined by the ratio of the
(5 V)
MR
WR
b) Noise figure versus I
c) Input noise voltage consideration: the input
gain response of the amplifier using the selected head
H(n) to the gain response of the amplifier using the
adjacent head H(n 1), Head H(n) being selected.
= 10 mA
(5 to 8 V)
= 35 mA
Boltzmann constant and T is the temperature in K.
The noise figure is defined as follows:
in 1 Hz bandwidth. Note that R
resistances between Rx or Ry to ground.
the variation of the noise figure with I
R
referred noise voltage calculation can significantly
be different (from 1.0 to 0.44 nV/ Hz for instance)
by taking into account an equivalent
signal-to-noise ratio when using two MR stripes
(28
It assumes that the signal coming from the head is
larger for a dual stripe head than for a single stripe
head (50% extra signal for dual stripe head).
F
MR
=
( ).
10
for each stripe) or one MR stripes (42 W).
log
----------------------------------------------------------- - dB
4kT
MIN.
MR
R
50
72
33
54
0.25
0.025
1.32
V
-------- -
G
MR1
TYP.
and R
Preliminary specification
no
v
2
+
MR
R
MR
70
50
70
100
80
41
61
1
MR2
MAX.
TDA5153
includes all
: Table 1 shows
MR
(mA) and
ns
ns
ns
mA
mA
mA
mA
mA
V
s
UNIT