bu4508af-hg NXP Semiconductors, bu4508af-hg Datasheet - Page 5

• Manufacturer Part Number: bu4508af-hg
• Description: Bu4508af Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 1998
Silicon Diffused Power Transistor
Fig.8. Typical collector-emitter saturation voltage.
Fig.9. Typical base-emitter saturation voltage.
100
0.01
1.2
1.1
0.9
0.8
0.7
0.6
10
0.1
0.001
1
10
1
1
0
hFE
0.1
VBEsat / V
Fig.7. High and low DC current gain.
VCEsat / V
VCE = 5V
0.5
Ths = 25 C
Ths = 85 C
IC = 5 A
0.01
1
1
1.5
0.1
IC = 4 A
IC/IB = 5
10
2
Ths = 25 C
Ths = 85 C
1
Ths = 25 C
Ths = 85 C
BU4508AF/X/Z
BU4508AF/X/Z
2.5
IC / A
IC / A
IB / A
100
10
3
4
Fig.10. Typical collector storage and fall time.
10
120
110
100
0.001
0.01
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0.1
10
1.0E-07
0
0
1
ts/tf / us
Fig.11. Normalised power dissipation.
Fig.12. Transient thermal impedance.
Zth K/W
0
PD%
0.05
0.02
0.5
0.2
0.1
0
I
0.5
C
20
=5 A; T
1.0E-05
PD% = 100 P
40
1
j
= 85˚C; f = 16kHz
60
1.0E-03
t / s
Ths / C
1.5
P
80
D
Normalised Power Derating
D
ts
tf
/P
with heatsink compound
D 25˚C
t
p
2
100
T
Product specification
1.0E-01
BU4508AF
Ths = 85 C
Freq = 16 kHz
ICsat = 5 A
D =
120
2.5
BU4508AF
t
T
p
t
IB / A
140
1.0E+01
Rev 1.000
3