tea1110auh NXP Semiconductors, tea1110auh Datasheet - Page 14

• Manufacturer Part Number: tea1110auh
• Description: Low Voltage Versatile Telephone Transmission Circuit With Dialler Interface
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 Feb 15
V
V
Automatic gain control (pin AGC)
I
I
DTMF amplifier (pin DTMF)
G
G
Mute function (pin MUTE)
V
V
I
start
stop
MUTE
Z
G
G
G
G
G
o(rms)
norx(rms)
IL
IH
Low voltage versatile telephone
transmission circuit with dialler interface
vdtmf
vct
SYMBOL
i
vrxr
vtrx
vdtmf(f)
vdtmf(T)
vtrxm
gain voltage reduction range
maximum receiving signal (RMS
value)
noise output voltage at pin QR
(RMS value)
gain control range for microphone
and receiving amplifiers with
respect to I
highest line current for maximum
gain
lowest line current for minimum
gain
input impedance
voltage gain from DTMF to LN
gain variation with frequency
referred to 1 kHz
gain variation with temperature
referred to 25 C
voltage gain from DTMF to QR
(confidence tone)
LOW level input voltage
HIGH level input voltage
input current
gain reduction for microphone and
receiving amplifiers
PARAMETER
line
= 15 mA
external resistor
connected between
GAR and QR
I
R
I
R
G
IR open-circuit;
R
psophometrically
weighted (P53 curve)
I
V
MUTE = LOW
f = 300 to 3400 Hz
T
V
R
MUTE = LOW
P
P
line
amb
DTMF
DTMF
L
L
L
L
vrx
= 0 mA sine wave drive;
= 0 mA sine wave drive;
= 150 ; THD = 2%
= 450 ; THD = 2%
= 150 ;
= 150
= 85 mA
= 33 dB;
14
= 25 to +75 C
CONDITIONS
= 20 mV (RMS);
= 20 mV (RMS);
24.1
V
V
EE
EE
MIN.
+ 1.5
0.4
0.25
0.35
5.9
23
56
20
25.3
1.5
80
TYP.
87
0.2
0.4
15
Product specification
TEA1110A
14
26.5
V
V
EE
CC
MAX.
+ 0.3 V
+ 0.4 V
dB
V
V
dBVp
dB
mA
mA
k
dB
dB
dB
dB
dB
UNIT
A