74aup1g14gw NXP Semiconductors, 74aup1g14gw Datasheet

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74aup1g14gw

Manufacturer Part Number
74aup1g14gw
Description
Low-power Schmitt-trigger Inverter
Manufacturer
NXP Semiconductors
Datasheet
1.74AUP1G14GW.pdf (19 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
74AUP1G14GW
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. General description
2. Features
3. Applications
The 74AUP1G14 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial Power-down applications using I
The I
the device when it is powered down.
The 74AUP1G14 provides a single inverting Schmitt trigger which accepts standard input
signals. It is capable of transforming slowly changing input signals into sharply defined,
jitter-free output signals.
The inputs switch at different points for positive and negative-going signals. The difference
between the positive voltage V
hysteresis voltage V
CC
74AUP1G14
Low-power Schmitt-trigger inverter
Rev. 02 — 28 August 2006
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
Wave and pulse shaper
Astable multivibrator
Monostable multivibrator
OFF
range from 0.8 V to 3.6 V.
OFF
HBM JESD22-A114-D Class 3A exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101-C exceeds 1000 V
circuitry provides partial Power-down mode operation
circuitry disables the output, preventing the damaging backflow current through
H
.
T+
and the negative voltage V
CC
= 0.9 A (maximum)
CC
T
is defined as the input
Product data sheet
OFF
.

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74aup1g14gw Summary of contents

Page 1

Low-power Schmitt-trigger inverter Rev. 02 — 28 August 2006 1. General description The 74AUP1G14 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. This device ensures a very low static and dynamic ...

Page 2

... Ordering information Table 1. Ordering information Type number Package Temperature range Name 74AUP1G14GW +125 C 74AUP1G14GM +125 C 74AUP1G14GF +125 C 5. Marking Table 2. Marking Type number 74AUP1G14GW 74AUP1G14GM 74AUP1G14GF 6. Functional diagram mna023 Fig 1. Logic symbol 7. Pinning information 7.1 Pinning 74AUP1G14 n. ...

Page 3

Philips Semiconductors 7.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 n. GND n. Functional description [1] Table 4. Function table Input A LOW HIGH [ ...

Page 4

Philips Semiconductors 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter V supply voltage CC V input voltage I V output voltage O T ambient temperature amb 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; ...

Page 5

Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-level output voltage OH V LOW-level output voltage OL I ...

Page 6

Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I power-off leakage current OFF I additional power-off leakage ...

Page 7

Philips Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see ...

Page 8

Philips Semiconductors 13. Waveforms Measurement points are given in Logic levels: V and V are typical output voltage drops that occur with the output load Fig 7. The data input (A) to output (Y) propagation delays Table 9. ...

Page 9

Philips Semiconductors 14. Transfer characteristics Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Symbol Parameter amb V positive-going T+ threshold voltage V negative-going T threshold voltage V ...

Page 10

Philips Semiconductors Table 11. Transfer characteristics Voltages are referenced to GND (ground = 0 V; for test circuit see Symbol Parameter V hysteresis voltage +125 C amb V positive-going ...

Page 11

Philips Semiconductors 15. Waveforms transfer characteristics Fig 9. Transfer characteristic Fig 11. Typical transfer characteristics; V 74AUP1G14_2 Product data sheet V I mna207 Fig 10. Definition of V 240 ...

Page 12

Philips Semiconductors Fig 12. Typical transfer characteristics; V 16. Application information The slow input rise and fall times cause additional power dissipation, this can be calculated using the following formula additional power dissipation ...

Page 13

Philips Semiconductors (1) Positive-going edge (2) Negative-going edge. Fig 13. Average function --- ---------------- - Average values for variable a are given in Fig 14. Relaxation oscillator ...

Page 14

Philips Semiconductors 17. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. ...

Page 15

Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT ...

Page 16

Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max ...

Page 17

Philips Semiconductors 18. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 19. Revision history Table 14. ...

Page 18

Philips Semiconductors 20. Legal information 20.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...

Page 19

Philips Semiconductors 22. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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