74aup1g34gw NXP Semiconductors, 74aup1g34gw Datasheet - Page 8

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74aup1g34gw

Manufacturer Part Number
74aup1g34gw
Description
74aup1g34 Low-power Buffer
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
Table 8.
Voltages are referenced to GND (ground = 0 V); for test circuit see
[1]
[2]
Table 9.
Voltages are referenced to GND (ground = 0 V); for test circuit see
74AUP1G34_2
Product data sheet
Symbol
T
C
Symbol
C
t
C
t
PHL
PHL
amb
PD
L
L
= 5 pF
= 10 pF
, t
, t
All typical values are measured at nominal V
C
P
f
f
C
V
N = number of inputs switching;
i
o
(C
D
CC
= 25 C
PD
= input frequency in MHz;
L
PLH
PLH
= output frequency in MHz;
= output load capacitance in pF;
= C
L
is used to determine the dynamic power dissipation (P
= supply voltage in V;
PD
V
Dynamic characteristics
Dynamic characteristics
CC
Parameter
power dissipation capacitance f = 1 MHz; V
Parameter
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A to Y
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A to Y
2
V
CC
f
o
2
) = sum of the outputs.
f
i
N + (C
L
Conditions
see
see
V
CC
V
V
V
V
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
2
…continued
Figure 7
Figure 7
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
f
o
) where:
CC
Conditions
.
V
V
V
V
V
V
CC
CC
CC
CC
CC
CC
= 0.8 V
= 1.1 V to 1.3 V
= 1.4 V to 1.6 V
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
Rev. 02 — 4 July 2006
D
I
= GND to V
in W).
Figure 8
Figure 8
CC
Min
2.0
1.6
1.4
1.2
1.0
2.3
1.9
1.7
1.5
1.4
40 C to +85 C
[2]
Min
-
-
-
-
-
-
Max
10.0
11.8
6.5
5.2
4.2
3.8
7.7
6.2
5.0
4.6
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Typ
2.5
2.6
2.7
2.9
3.4
4.0
40 C to +125 C
Min
2.0
1.6
1.4
1.2
1.0
2.3
1.9
1.7
1.5
1.4
74AUP1G34
[1]
Max
-
-
-
-
-
-
Low-power buffer
Max
11.0
13.1
7.2
5.8
4.6
4.2
8.5
6.9
5.5
5.1
Unit
pF
pF
pF
pF
pF
pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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