74aup1g06gf NXP Semiconductors, 74aup1g06gf Datasheet
74aup1g06gf
Manufacturer Part Number
74aup1g06gf
Description
Low-power Inverter
Manufacturer
NXP Semiconductors
Datasheet
1.74AUP1G06GF.pdf
(16 pages)
1. General description
2. Features
The 74AUP1G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire V
This device ensures a very low static and dynamic power consumption across the entire
V
This device is fully specified for partial Power-down applications using I
The I
the device when it is powered down.
The 74AUP1G04 provides the single inverting buffer.
CC
74AUP1G04
Low-power inverter
Rev. 02 — 28 June 2006
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of V
I
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
OFF
range from 0.8 V to 3.6 V.
OFF
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
HBM JESD22-A114-C Class 3A. Exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101-C exceeds 1000 V
circuitry provides partial Power-down mode operation
circuitry disables the output, preventing the damaging backflow current through
CC
range from 0.8 V to 3.6 V.
CC
= 0.9 A (maximum)
CC
Product data sheet
OFF
.
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