74aup2g04gw NXP Semiconductors, 74aup2g04gw Datasheet
74aup2g04gw
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74aup2g04gw Summary of contents
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Low-power dual inverter Rev. 01 — 22 November 2006 1. General description The 74AUP2G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Schmitt trigger action at all inputs makes the circuit ...
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... Table 1. Ordering information Type number Package Temperature range Name 74AUP2G04GW +125 C 74AUP2G04GM +125 C 74AUP2G04GF +125 C 4. Marking Table 2. Marking Type number 74AUP2G04GW 74AUP2G04GM 74AUP2G04GF 5. Functional diagram mnb079 Fig 1. Logic symbol 74AUP2G04_1 Product data sheet ...
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... NXP Semiconductors 6. Pinning information 6.1 Pinning 74AUP2G04 GND 001aad694 Fig 4. Pin configuration SOT363 (SC-88) 6.2 Pin description Table 3. Pin description Symbol Pin Description 1A 1 data input 1A GND 2 ground ( data input data output supply voltage ...
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... NXP Semiconductors 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current OK V output voltage O I output current ...
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... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current ...
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... NXP Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +125 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V HIGH-level output voltage OH V LOW-level output voltage OL I input leakage current I I power-off leakage current ...
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... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay nA to nY; see propagation delay nA to nY; see ...
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... NXP Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions pF and power dissipation MHz capacitance [1] All typical values are measured at nominal V [ the same as t and t ...
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... NXP Semiconductors Test data is given in Table 10. Definitions for test circuit Load resistance Load capacitance including jig and probe capacitance Termination resistance should be equal to the output impedance External voltage for measuring switching times. EXT Fig 8. Load circuitry for switching times Table 10 ...
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... NXP Semiconductors 13. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 9. Package outline SOT363 (SC-88) 74AUP2G04_1 Product data sheet scale ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT b D max max 0.25 1.5 mm 0.5 0.04 0.17 1.4 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION ...
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... NXP Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max max 0.20 1.05 mm 0.5 0.04 0.12 0.95 OUTLINE VERSION IEC SOT891 Fig 11. Package outline SOT891 (XSON6) 74AUP2G04_1 Product data sheet ...
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... NXP Semiconductors 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date 74AUP2G04_1 ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 18. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 14 Abbreviations ...