w25q32bw Winbond Electronics Corp America, w25q32bw Datasheet - Page 62

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w25q32bw

Manufacturer Part Number
w25q32bw
Description
32m-bit 1.8v Serial Flash Memory With Dual And Quad Spi
Manufacturer
Winbond Electronics Corp America
Datasheet
11.7 AC Electrical Characteristics (
Notes:
DESCRIPTION
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic Signature
Read
/CS High to next Instruction after Suspend
Write Status Register Time
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
1.
2.
3.
4.
Clock high + Clock low must be less than or equal to 1/f
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when SRP0 bit is set to 1.
For multiple bytes after first byte within a page,
number of bytes programmed.
(4)
cont’d)
t
(4)
BPN
- 62 -
=
C
t
BP1 +
.
SYMBOL
t
t
t
t
t
t
WHSL
SHWL
HHQX
RES
RES
HLQZ
t
t
t
t
t
SUS
CHHH
HHCH
CHHL
DP
t
t
t
t
t
t
t
BE
BE
t
t
BP1
BP2
PP
SE
CE
W
BP2 * N
(2)
1
2
(2)
1
2
(2)
(2)
(2)
(2)
(3)
(3)
(typical) and
ALT
t
t
HZ
LZ
MIN
t
100
20
BPN
5
5
5
=
t
BP1 +
TYP
120
150
W25Q32BW
SPEC
2.5
0.7
10
20
30
5
t
BP2 * N
(max), where N =
1,000
MAX
200
800
12
30
30
20
15
50
10
15
7
3
3
UNIT
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
s

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