hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 73

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 60
Figure 61
3.26
3.26.1
The No Operation Command (NOP) should be used in
cases when the SDRAM is in a idle or a wait state. The
purpose of the No Operation Command is to prevent
the SDRAM from registering any unwanted commands
between operations. A No Operation Command is
3.26.2
The Deselect Command performs the same function as
a No Operation Command. Deselect Command occurs
Data Sheet
C K , C K
C K E
C M D
C K , C K
C K E
C M D
Auto-Refresh command to Power-Down entry
MRS, EMRS command to Power-Down entry
Other Commands
No Operation Command
Deselect Command
T0
T0
Refresh
Auto
T1
MRS or
EMRS
T1
T2
CKE can go low one clock after an Auto-Refresh command
When tRFC expires the DRAM is in Precharge Power-Down Mode
T2
t
MRD
tRFC
T3
T3
Enters Precharge Power-Down Mode
T4
T4
73
registered when CS is LOW with RAS, CAS, and WE
held HIGH at the rising edge of the clock. A No
Operation Command will not terminate a previous
operation that is still executing, such as a burst read or
write cycle.
when CS is brought HIGH, the RAS, CAS, and WE
signals become don’t care.
T5
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
tis
T6
Tn
tXP
T7
512-Mbit DDR2 SDRAM
Functional Description
09112003-SDM9-IQ3P
Command
Rev. 1.3, 2005-01
Valid
MRS_PD
ARPD