hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 87

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 68
Table 39
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1) The driver characteristics evaluation conditions are Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (
3) The driver characteristics evaluation conditions are Maximum 0 °C (
Data Sheet
Reduced Strength Default Pull-up Driver Diagram
Reduced Strength Default Pull–down Driver Characteristics
Pull-down Driver Current [mA]
Min.
0.00
1.72
3.44
5.16
6.76
8.02
8.84
9.31
9.64
9.89
10.09
10.26
10.41
10.54
10.66
10.77
10.88
10.98
—
—
-20,00
-40,00
-60,00
-80,00
0,00
1)
0
0,2
0,4
IBIS Target low
0.00
3.24
6.25
9.03
11.52
13.66
15.41
16.77
17.74
18.83
18.80
19.06
19.23
19.35
19.46
19.56
19.65
19.73
19.80
—
0,6
VDDQ to VOUT (V)
0,8
1
2)
1,2
87
1,4
IBIS Target high
0.00
4.11
8.01
11.67
15.03
18.03
20.61
22.71
24.35
25.56
26.38
26.90
27.24
27.47
27.64
27.78
27.89
27.97
28.02
—
1,6
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
T
T
CASE
CASE
1,8
).
),
T
V
V
CASE
DDQ
DDQ
2
),
= 1.9 V, fast-fast process
= 1.7 V, slow-slow process
V
2)
AC & DC Operating Conditions
DDQ
512-Mbit DDR2 SDRAM
Minimum
IBIS Target Low
IBIS Target High
Maximum
= 1.8 V, typical process
Max.
0.00
4.77
9.54
14.31
19.08
23.85
28.62
33.33
37.77
41.73
45.21
48.21
50.73
52.77
54.42
55.80
57.03
58.23
59.43
60.63
09112003-SDM9-IQ3P
3)
Rev. 1.3, 2005-01