mt28f640j3rp-115-met Micron Semiconductor Products, mt28f640j3rp-115-met Datasheet - Page 41
mt28f640j3rp-115-met
Manufacturer Part Number
mt28f640j3rp-115-met
Description
128mb, 64mb, 32mb Q-flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT28F640J3RP-115-MET.pdf
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Electrical Specificatons
Table 22: Absolute Maximum Ratings
Note 1
NOTE:
09005aef80b5a323
MT28F640J3.fm – Rev. N 3/05 EN
VOLTAGE
Temperature under bias expanded
Storage Temperature
For V
Voltage on any pin
1. Stresses greater than those listed in Table 22 may cause permanent damage to the device. This is a stress rating only
2. All specified voltages are with respect to GND. Minimum DC voltage is -0.5V on input/output pins and -0.2V on V
3. Output shorted for no more than one second. No more than one output shorted at a time.
Short Circuit Output Current
and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
and V
input/output pins, V
<20ns.
CC
Q = +2.7V to +3.6V
PEN
pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on
CC
, and V
PEN
is V
CC
+0.5V which, during transitions, may overshoot to V
41
-2.0V
MIN
-40
-65
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MAX
+125
+5.0
+85
100
128Mb, 64Mb, 32Mb
Q-FLASH MEMORY
CC
UNITS
+2.0V for periods
mA
°C
°C
V
©2000 Micron Technology. Inc.
NOTES
2
3
CC
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