tza3030 NXP Semiconductors, tza3030 Datasheet - Page 10
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tza3030
Manufacturer Part Number
tza3030
Description
Sdh/sonet Stm1/oc3 Optical Receiver
Manufacturer
NXP Semiconductors
Datasheet
1.TZA3030.pdf
(20 pages)
Philips Semiconductors
CHARACTERISTICS
For typical values T
temperature range and process spread.
1998 Aug 24
I
T
T
R
f
f
PSRR
Input: IPhoto
V
PECL outputs: OUTPECL and OUTQPECL
V
V
V
t
t
V
I
P
I
I
SYMBOL
CCD
CCA
n(tot)
i(IPhoto)(p-p)
r
f
j
amb
R
CC
tot
3dB(h)
3dB(l)
bias(IPhoto)
OH
OL
OO
SDH/SONET STM1/OC3 optical receiver
tr
tr
/ t
supply voltage
digital supply current
analog supply current
total power dissipation
junction temperature
operating ambient
temperature
small-signal transresistance
of the receiver
high frequency 3 dB point
low frequency 3 dB point
total integrated RMS noise
current over bandwidth
power supply rejection ratio
AGC loop constant
input bias voltage
input current (peak-to-peak
value)
HIGH-level output voltage
LOW-level output voltage
output offset voltage
rise time
fall time
amb
PARAMETER
= 25 C and V
CC
= 5 V; minimum and maximum values are valid over the entire ambient
note 1
note 2
note 3
measured differentially
pin BWC left
unconnected; note 4
referenced to input;
C
measured differentially;
note 6
V
V
50
50
measured differentially
20% to 80%
80% to 20%
CC
CC
i
PECL outputs
CML outputs
f = 100 kHz to 10 MHz
f = 10 MHz to 100 MHz
= 1.2 pF; note 5
f = 90 MHz
f = 120 MHz
f = 155 MHz
= 5 V
= 3.3 V
to V
to V
CONDITIONS
CC
CC
10
2 V
2 V
3
13
11
24
20
tbf
V
V
40
40
2000
1000
10
CC
CC
MIN.
1100
1840
5
20
47
17
36
+25
2000
1000
120
30
16
tbf
tbf
0.5
10
1
1048
+1
+1
tbf
tbf
TYP.
Objective specification
5.5
28
24
51
525
+110
+85
40
tbf
+2000
V
V
+10
tbf
tbf
+1000
CC
CC
MAX.
TZA3030
900
1620 mV
V
mA
mA
mA
mA
mW
k
k
MHz
kHz
nA
nA
nA
dB/ms
mV
mV
mV
ps
ps
UNIT
C
C
A/V
A/V
A
A