tza3026 NXP Semiconductors, tza3026 Datasheet - Page 9

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tza3026

Manufacturer Part Number
tza3026
Description
Tza3026 Sdh/sonet Stm4/oc12 Transimpedance Amplifier
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
Table 4:
Typical values at T
range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified.
[1]
[2]
9397 750 14763
Product data sheet
Symbol
Bias voltage: pad DREF
R
TC
Input: pad IPHOTO
I
V
Monitor: pad IDREF_MON
V
A
I
TC
Data outputs: pads OUT and OUTQ
V
V
R
t
t
PD(p-p)
MON(offset)
r
f
bias
MON
MON
o(cm)
o(dif)(p-p)
DREF
O(dif)
RDREF
MON(offset)
Guaranteed by design.
The input current range is determined by the allowed Pulse Width Distortion (PWD), which is <5 % over the whole input current range.
The PWD is defined as:
Characteristics
j
= 25 C and V
Parameter
resistance between pad
DREF and pad V
temperature coefficient
R
input current (peak-to-peak
value)
input bias voltage
monitor voltage
monitor current ratio
monitor offset current
temperature coefficient
monitor offset current
common mode output
voltage
differential load output
voltage (peak-to-peak
value)
differential output
resistance
rise time
fall time
DREF
PWD
…continued
=
CC
------------------------------ -
pulse width
= 3.3 V; minimum and maximum values are valid over the entire ambient temperature
CC
T
Conditions
tested at DC level;
T
ratio I
T
AC-coupled; R
AC-coupled; R
tested at DC level
20 % to 80 %;
I
80 % to 20 %;
I
PD
PD
0.5
amb
amb
Rev. 01 — 2 May 2005
I
I
I
PD
PD
PD
= 100 A(p-p)
= 100 A (p-p)
= 25 C
= 25 C
DREF_MON
= 0.84 A (p-p)
= 100 A (p-p)
= 1500 A (p-p)
100 %
SDH/SONET STM4/OC12 transimpedance amplifier
L(dif)
L(dif)
, where T is the clock period.
/ I
DREF
= 100
= 100
R
tr
[2]
[1]
Min
250
-
700
0
19.5
0
-
-
8
-
-
-
-
-
1500 -
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Typ
300
0.33
850
-
20
10
30
V
12
125
250
100
300
300
CC
1.2 -
TZA3026
Max
350
-
+1500
1000
V
20.5
20
-
-
-
500
-
-
-
CC
0.4 V
Unit
mV
%
nA/ C
V
mV
mV
mV
ps
ps
9 of 15
A
A
/ C

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