pip3210-r NXP Semiconductors, pip3210-r Datasheet - Page 10

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pip3210-r

Manufacturer Part Number
pip3210-r
Description
Topfet High Side Switch
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
September 2001
TOPFET high side switch
Fig.22. Typical battery to ground clamping voltage.
65
60
55
50
65
60
55
50
Fig.23. Typical battery to load clamping voltage.
10
5
0
-50
-50
-30
V
V
V
I
I
BG
L
BL
BL
L
Fig.24. Typical negative load clamping.
/ A
= f(V
/ V
/ V
= f(T
LG
j
); parameter I
0
0
); conditions V
V
-25
BG
= f(T
50
50
j
); parameter I
T
T
V
j
j
-20
LG
/
/
L
; condition I
O
O
IG
C
C
/ V
= = 0V, T
100
100
I
G
G
-15
=
G
150
150
j
= 10mA
= 25˚C
200 mA
600 mA
1 mA
I
1 mA
L
=
200
-10
200
10
Fig.27. Typical overload characteristic, T
-10
-15
-20
-25
-30
50
45
40
35
30
25
20
15
10
Fig.25. Typical negative load clamping voltage.
-10
-15
-20
-25
-30
-35
-40
-45
-50
5
0
-5
0
-50
Fig.26. Typical reverse diode characteristic.
V
I
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1
0
L
I
V
L
LG
I
I
L
= f(V
L
LG
/ A
/ A
= f(V
= f(T
/ V
2
BL
BL
); condition V
j
); parameter I
4
0
); conditions V
6
V
50
8
BL(TO)
current limiting
T
V
V
BG
j
10
typ.
BL
L
BL
/
; condition V
O
IG
= 16 V; parameter t
C
/ V
/ V
Short circuit trip = 150us
= 0 V, T
100
12
Product specification
14
PIP3210-R
j
= 25 ˚C
150
IG
16
= = 0V
mb
10 mA
Rev 1.000
I
10 A
18
= 25 ˚C.
L
=
p
200
0.0
20

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