tps856 TOSHIBA Semiconductor CORPORATION, tps856 Datasheet - Page 2

• Manufacturer Part Number: tps856
• Description: Toshiba Photo-ic Silicon Epitaxial Planar
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Operating Ranges
Electrical and Optical Characteristics
Note 4: Light current measurement circuit
Supply voltage
Stand-by on voltage
Stand-by off voltage
Supply voltage
Supply current (1)
Supply current (2)
Light current (1)
Light current (2)
Light current (3)
Light current (4)
Light current ratio
Dark current
Saturation output voltage
Waiting time
Switching time
Note 2: CIE standard A light source is used (color temperature = 2856K, approximated incandescence light).
Note 3: F10 of fluorescence light is used as light source. (color temperature = 5000K)
However, white LED is substituted in a mass-production process.
Characteristics
Characteristics
Rise time
Fall time
Delay time
Storage time
I
L
(3) classification A rank: 44.1 μA to 73.7 μA
source
Light
Symbol
Symbol
Vstbon
Vstboff
L I
I
I
L I
I
I
I
I
I
CC
CC
V
V
LEAK
L
L
L
L
t
TPS856
V
wait
t
t
CC
CC
t
t
(1)
(2)
(3)
(4)
(1)
d
s
O
r
(3)
f
(1)
(2)
V
V
R
V
R
V
(Note 2), (Note 4)
V
(Note 3), (Note 4)
V
V
V
V
E
V
V
CC
OUT
(Ta = 25°C)
E
CC
CC
CC
CC
CC
CC
CC
CC
V
CC
CC
L
L
Min
1.8
1.8
V
I
0
= 1 kΩ
= 1 kΩ
= 100 lx
L
= 5 lx
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
= 3 V, V
A
2
Typ.
⎯
⎯
⎯
Test Condition
Vstb
stb
stb
stb
stb
stb
stb
stb
stb
stb
stb
= 3 V,E
= 0.3 V,E
= 3 V,E
= 3 V,E
= 3 V,E
= 0.3 V,E
= 3 V,E
= 3 V,R
= 3 V,R
= 3 V,R
⎯
⎯
V
(Note 3)
Max
(Note 3)
5.5
0.3
CC
(Note 3), (Note 4)
(Note 3), (Note 4)
(Note 2) (Note 5)
(Note 2) (Note 5)
V
V
V
V
V
L
= 1000 lx
V
= 100 lx
= 10 lx
= 100 lx
V
= 0
= 5 k Ω
L
L
= 1000 lx
= 100 lx
Unit
= 150 k Ω ,
= 150 k Ω ,
V
V
V
(Note 7)
Min
1.8
4.0
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.02
0.70
100
3.0
3.0
5.7
1.0
⎯
57
57
⎯
⎯
70
40
5
2007-10-01
Max
0.85
5.5
8.0
0.1
0.1
80
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPS856
Unit
μA
μA
μA
μA
μA
μA
μ A
ms
⎯
μ s
V
V