lpc1224 NXP Semiconductors, lpc1224 Datasheet - Page 44

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lpc1224

Manufacturer Part Number
lpc1224
Description
Lpc122x 32-bit Arm Cortex-m0 Microcontroller; Up To 128 Kb Flash And 8 Kb Sram
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
11. Dynamic characteristics
LPC122X
Objective data sheet
11.1 Flash memory
11.2 External clock
Table 11.
T
[1]
[2]
Table 12.
T
[1]
[2]
Symbol
t
t
N
t
Symbol
f
T
t
t
t
t
amb
er
prog
ret
amb
Fig 18. External clock timing (with an amplitude of at least V
osc
CHCX
CLCX
CLCH
CHCL
endu
cy(clk)
Erase and programming times are valid over the lifetime of the device (minimum 20000 cycles).
Number of program/erase cycles.
Parameters are valid over operating temperature range unless otherwise specified.
Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply
voltages.
=
=
40
40
Dynamic characteristic: flash memory
Dynamic characteristic: external clock
C to +85
C to +85
Parameter
oscillator frequency
clock cycle time
clock HIGH time
clock LOW time
clock rise time
clock fall time
Parameter
erase time
programming
time
endurance
retention time
All information provided in this document is subject to legal disclaimers.
C; V
C; V
Rev. 1.1 — 21 February 2011
DD(3V3)
DD(3V3)
Conditions
for one page (512 byte)
for one sector (4 kB)
for all sectors; mass
erase
one word (4 bytes)
four sequential words
128 bytes (one row of 32
words)
over specified ranges.
over specified ranges.
t
CHCL
Conditions
t
CLCX
32-bit ARM Cortex-M0 microcontroller
Min
1
40
T
T
-
-
cy(clk)
cy(clk)
[1]
T
cy(clk)
 0.4
 0.4
t
CLCH
t
CHCX
[1]
[1]
[1]
[1]
[1]
[1]
[2]
i(RMS)
Min
-
-
-
-
-
20000
10
Typ
-
-
-
-
-
-
= 200 mV)
[2]
002aaa907
LPC122x
© NXP B.V. 2011. All rights reserved.
Max
20
162
20
49
194
765
-
-
Max
25
1000
-
-
5
5
years
Unit
ms
ms
ms
s
s
s
cycles
44 of 60
Unit
MHz
ns
ns
ns
ns
ns

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