km416c256d Samsung Semiconductor, Inc., km416c256d Datasheet
km416c256d
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km416c256d Summary of contents
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... Samsung's advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines. FEATURES Part Identification ¡ Ü - KM416C256D/DL (5V, 512K Ref.) - KM416V256D/DL (3.3V, 512K Ref.) Active Power Dissipation ¡ Ü Speed 3 ...
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... KM416C256D, KM416V256D KM416C/V256DJ ¡ Ü ¡Û DQ0 2 DQ1 3 DQ2 4 DQ3 DQ4 7 DQ5 8 DQ6 9 DQ7 10 N RAS 14 N PIN CONFIGURATION (Top Views DQ0 39 DQ15 DQ1 38 DQ14 DQ2 37 DQ13 DQ3 36 DQ12 ...
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... KM416C256D, KM416V256D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended peri- ods may affect device reliability ...
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... KM416C256D, KM416V256D DC AND OPERATING CHARACTERISTICS Symbol Power Speed I Don't care CC1 I Don't care Don't care CC2 I Don't care CC3 I Don't care CC4 Normal I Don't care CC5 L I Don't care CC6 I L Don't care CC7 I L Don't care CCS Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.) ...
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... KM416C256D, KM416V256D CAPACITANCE =25 ¡ É Parameter Input capacitance [A0 ~ A8] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS (0 ¡ É ¡ Â T Test condition (5V device =5.0V ¡ ¾ 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V CC Test condition (3.3V device =3.3V ¡ ¾ 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter ...
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... KM416C256D, KM416V256D AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (Normal) Refresh period (L-ver) CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time CAS set-up time (CAS -before-RAS refresh) ...
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... KM416C256D, KM416V256D NOTES An initial pause of 200us is required after power-up followed by any 8 ROR or CBR cycles before proper device operation is 1. achieved. Input voltage levels are Vih/Vil Transition times are measured between V 3. Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 50pF. ...
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... KM416C256D, KM416V256D 512cycle of burst refresh must be executed within 8ms before and after self refresh in order to meet refresh specification (L- 11. version). 12. tASC, tCAH are referenced to the earlier CAS rising edge. 13. tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle. ...