km416c256d Samsung Semiconductor, Inc., km416c256d Datasheet - Page 6

• Manufacturer Part Number: km416c256d
• Description: 256k X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C256D, KM416V256D
AC CHARACTERISTICS
Data set-up time
Data hold time
Refresh period (Normal)
Refresh period (L-ver)
CAS to W delay time
RAS to W delay time
Column address to W delay time
CAS precharge to W delay time
CAS set-up time (CAS -before-RAS refresh)
CAS hlod time (CAS -before-RAS refresh)
RAS to CAS precharge time
CAS precharge time (CBR counter test cycle)
Access time from CAS precharge
Fast Page mode cycle time
Fast Page read-modify-write cycle time
CAS precharge time (Fast Page cycle)
RAS pulse width (Fast Page cycle)
RAS hold time from CAS precharge
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
RAS pulse width (C-B-R self refresh)
RAS precharge time (C-B-R self refresh)
CAS hold time (C-B-R self refresh)
Note)
*1 :
5V only
Parameter
(Continued)
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DS
DH
REF
REF
CWD
RWD
AWD
CPWD
CSR
CHR
RPC
CPT
CPA
PC
PRWC
CP
RASP
RHCP
OEA
OED
OEZ
OEH
RASS
RPS
CHS
Min
100
-50
10
37
72
47
52
10
10
20
35
77
10
50
30
12
15
90
0
5
0
*1
-5
100K
Max
128
30
15
12
8
Min
100
110
-50
10
37
82
52
57
10
10
20
40
82
10
60
35
12
15
0
5
0
-6
100K
Max
128
35
15
12
8
Min
100
130
-50
15
47
97
62
67
10
10
25
45
97
10
70
40
17
20
0
5
0
-7
CMOS DRAM
100K
Max
128
40
20
17
8
Units
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
ns
ns
Notes
9,19
9,19
7,14
17
18
13
11
11
11
7
7
7
3
6