km416c256d Samsung Semiconductor, Inc., km416c256d Datasheet - Page 4

• Manufacturer Part Number: km416c256d
• Description: 256k X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C256D, KM416V256D
DC AND OPERATING CHARACTERISTICS
I
I
I
I
I
I
I
I
*Note :
CC1
CC2
CC3
CC4
CC5
CC6
CC7
CCS
Symbol
* : Operating Current (RAS and UCAS, LCAS, Address cycling @tRC=min.)
* : RAS-only Refresh Current (UCAS=LCAS=V
* : Fast Page Mode Current (RAS=V
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @tRC=min.)
: Standby Current (RAS=UCAS=LCAS=W=V
: Standby Current (RAS=UCAS=LCAS=W=V
: Battery back-up current, Average power supply current, Battery back-up mode
: Self Refresh Current
I
I
I
I
I
I
I
I
Input high voltage(V
Din=Don't care, T
RAS=UCAS=LCAS=V
DQ0 ~ DQ15=V
CCS
CC1
CC2
CC3
CC4
CC5
CC6
CC7
I
I
I
CC1
CC
CC4
is specified as an average current. In I
, I
, address can be changed maximum once within one fast page mode cycle time, tPC.
CC3
, I
Don't care
Don't care
Don't care
Don't care
Don't care
CC4
Normal
Power
CC
L
L
L
RC
and I
-0.2V, 0.2V or Open
IH
=125us, T
)=V
IL
CC6
, W=OE=A0 ~ A8=V
CC
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
-0.2V, Input low voltage(V
Don't care
Don't care
Don't care
Don't care
RAS
Speed
-5
-6
-7
-5
-6
-7
-5
-6
-7
-5
-6
-7
=T
IL
, UCAS or LCAS, Address cycling @tPC=min.)
RAS
min~300ns
IH
CC
CC
IH
CC1
)
, RAS, Address cycling @tRC=min.)
-0.2V)
-0.2V or 0.2V,
, I
CC3
KM416V254D
, I
IL
(Continued)
)=0.2V, UCAS, LCAS=0.2V,
CC6
100
200
100
0.5
90
80
90
80
60
55
90
80
1
-
-
-
-
and I
CC7,
address can be changed maximum once while RAS=V
Max
KM416C254D
110
110
150
110
300
200
90
80
90
80
70
60
55
90
80
2
1
CMOS DRAM
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
IL
. In