km416c256d Samsung Semiconductor, Inc., km416c256d Datasheet - Page 8

• Manufacturer Part Number: km416c256d
• Description: 256k X 16bit Cmos Dynamic Ram With Fast Page Mode
• Manufacturer: Samsung Semiconductor, Inc.

KM416C256D, KM416V256D
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20.
t
512cycle of burst refresh must be executed within 8ms before and after self refresh in order to meet refresh specification (L-
version).
tASC, tCAH are referenced to the earlier CAS rising edge.
tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle.
tCWD is referenced to the later CAS falling edge at word red-modify-write cycle.
t
t
t
DS
DQ0 ~ DQ15
CWL
CSR
CHR
, t
DH
is referenced to earlier CAS falling low before RAS transition low.
is referenced to the later CAS rising high after RAS transition low.
is specified from W falling edge to the earlier CAS rising edge.
UCAS
LCAS
are specified for earlier CAS falling low.
UCAS
LCAS
RAS
w
t
DS
Din
t
CSR
t
DH
t
CHR
CMOS DRAM