2sa1203 TOSHIBA Semiconductor CORPORATION, 2sa1203 Datasheet - Page 3

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2sa1203

Manufacturer Part Number
2sa1203
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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−3000
−1000
−0.05
−0.03
−0.01
−500
−300
−100
−1.2
−0.8
−0.4
−0.5
−0.3
−0.1
−50
−30
−10
−3
−1
−5
−0.1
0
−1
0
I C max
(continuous)
I C max (pulse)*
*: Single nonrepetitive pulse
−10
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
Tested without a substrate.
−3
−0.3
Collector-emitter voltage V
Collector-emitter voltage V
−4
DC operation
Ta = 25°C
Collector current I
−10
Safe Operating Area
−8
−1
Ta = 100°C
V
CE (sat)
−30
I
I B = −1 mA
C
100 ms*
−25
– V
25
−3
−8
10 ms*
−6
−4
−3
−2
−100
CE
0
– I
C
C
V CEO max
−10
Common emitter
Ta = 25°C
−300
(mA)
Common emitter
I C /I B = 50
CE
CE
−12
1 ms*
(V)
−30
(V)
−1000
−3000
−100
−16
3
3000
1000
−1.6
−1.2
−0.8
−0.4
300
100
500
1.2
1.0
0.8
0.6
0.4
0.2
50
30
10
0
0
−1
0
0
(1)
(2)
Ta = 100°C 25
20
−3
−0.4
Base-emitter voltage V
Ambient temperature Ta (°C)
Collector current I
40
−10
Ta = 100°C
−0.8
60
−30
−25
25
I
h
(1) Mounted on a ceramic
(2) No heat sink
P
C
−25
FE
C
– V
substrate (250 mm
80
– Ta
– I
−1.2
−100
BE
C
100
C
BE
−300
(mA)
Common emitter
V CE = −2 V
Common emitter
V CE = −2 V
−1.6
120
(V)
2
−1000
× 0.8 t)
140
−2.0
2006-11-09
2SA1203
−3000
160

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