2sa1145 TOSHIBA Semiconductor CORPORATION, 2sa1145 Datasheet - Page 2

• Manufacturer Part Number: 2sa1145
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
Characteristics
FE
indicator
Characteristics
classification O: 80 to 160, Y: 120 to 240
A1145
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
h
V
Symbol
FE
(BR) CEO
CE (sat)
I
I
V
C
CBO
EBO
f
BE
T
ob
(Note) V
V
V
I
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
= −1 mA, I
= −10 mA, I
= −150 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −10 V, I
2
Test Condition
B
C
C
C
C
B
E
= 0
= 0
= −10 mA
= −10 mA
= −10 mA
E
= −1 mA
= 0, f = 1 MHz
= 0
−150
Min
80
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
200
2.5
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-09
Max
−0.1
−0.1
−1.0
−0.8
2SA1145
240
⎯
⎯
⎯
MHz
Unit
μA
μA
pF
V
V
V