2sa1893 TOSHIBA Semiconductor CORPORATION, 2sa1893 Datasheet

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2sa1893

Manufacturer Part Number
2sa1893
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
2sa1893-Y
Manufacturer:
TOSHIBA
Quantity:
18 832
Strobe Flash Applications
Audio Power Amplifier Applications
Absolute Maximum Ratings
h
h
Low saturation voltage: V
High-power dissipation: P
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
FE(1)
FE(2)
= 100 to 320 (V
= 70 (min) (V
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
CE
DC
Pulsed
CE
= −2 V, I
(I
(Note 1)
= −2 V, I
CE (sat)
C
C
= 1.3 W
= −4 V, I
C
= −1.0 V (max)
C
= −4 A)
(Ta = 25°C)
= −0.5 A)
B
Symbol
V
V
V
T
I
= −0.1 A)
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
2SA1893
j
−55 to 150
Rating
−0.5
−35
−20
150
1.3
−8
−5
−8
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.55 g (typ.)
JEDEC
JEITA
TOSHIBA
2-8M1A
2006-11-09
2SA1893
Unit: mm

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2sa1893 Summary of contents

Page 1

... V (max) = −0 (Ta = 25°C) Symbol Rating Unit V −35 V CBO V −20 V CEO V −8 V EBO I − − −0 1 150 ° −55 to 150 °C stg 1 2SA1893 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.55 g (typ.) 2006-11-09 ...

Page 2

... − − − −0 − MHz 2SA1893 Min Typ. Max Unit ― ― −100 nA ― ― −100 nA −20 ― ― V 100 ― 320 70 ― ― ― ― ...

Page 3

... Common emitter − −2 V −7 −6 25 −5 −4 −3 −2 −3 −10 − −0.2 3 2SA1893 h – Common emitter − 100°C 25 −25 −0.1 −0.3 −1 −3 −10 Collector current I ( – 100° ...

Page 4

... V CEO max temperature. −0.03 −0.1 −0.3 −0.5 −1 −3 −5 −10 Collector-emitter voltage – 25°C 0 Pulse width t (s) w 1.6 1.4 1 ms* 1.2 1.0 0.8 0.6 0.4 0 Ambient temperature Ta (°C) −30 (V) 4 2SA1893 100 1000 P – 100 125 150 175 2006-11-09 ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SA1893 20070701-EN 2006-11-09 ...

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