2sa1892 TOSHIBA Semiconductor CORPORATION, 2sa1892 Datasheet
2sa1892
Manufacturer Part Number
2sa1892
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA1892.pdf
(5 pages)
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Company:
Part Number:
2sa1892-Y
Manufacturer:
TOSHIBA
Quantity:
21 121
Power Amplifier Applications
Power Switching Applications
•
•
•
•
Absolute Maximum Ratings
Low collector-emitter saturation voltage: V
High collector power dissipation: P
High-speed switching time: t
Complementary to 2SC5029
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
stg
= 1.0 μs (typ.)
C
(Ta = 25°C)
= 1.3 W
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1892
j
(I
CE (sat)
C
= −1 A, I
−55 to 150
= −0.5 V (max)
Rating
−0.2
−50
−50
150
1.3
−5
−3
B
1
= −0.05 A)
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.55 g (typ.)
JEDEC
JEITA
TOSHIBA
2-8M1A
2006-11-09
―
―
2SA1892
Unit: mm
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