2sa1432 TOSHIBA Semiconductor CORPORATION, 2sa1432 Datasheet

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2sa1432

Manufacturer Part Number
2sa1432
Description
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
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Quantity
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Part Number:
2SA1432
Manufacturer:
toshiba
Quantity:
30 000
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Absolute Maximum Ratings
High voltage: V
Low saturation voltage: V
Small collector output capacitance: C
Complementary to 2SC3672
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
CBO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
= −300 V, V
CE (sat)
CEO
= −0.5 V (max)
(Ta = 25°C)
Symbol
= −300 V
ob
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
= 6 pF (typ.)
C
B
C
2SA1432
j
−55 to 150
Rating
−300
−300
−100
1000
−20
150
−8
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.2 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7D101A
2006-11-09
2SA1432
Unit: mm

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2sa1432 Summary of contents

Page 1

... V CEO = −0.5 V (max (typ.) ob (Ta = 25°C) Symbol Rating Unit V −300 V CBO V −300 V CEO V −8 V EBO I −100 − 1000 150 ° −55 to 150 °C stg 1 2SA1432 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) 2006-11-09 ...

Page 2

... − − MHz Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SA1432 Min Typ. Max Unit ― ― −0.1 μA ― ― −0.1 μA −300 ― ― V −300 ― ...

Page 3

... Collector-emitter voltage V −10 −8 −6 −4 −2 0 −240 −280 0 −40 (V) Collector-emitter voltage V 3 2SA1432 I – −10 −5 −3 −2 −1 −0.5 −0.3 −0 −0 −4 −6 −8 −10 −12 −14 ( – ...

Page 4

... Common emitter − −55 −1 −3 −10 −30 −100 Collector current I (mA – (sat) C Common emitter − ...

Page 5

... Single nonrepetitive pulse Ta = 25°C −0.001 140 160 Curves must be derated linearly with increase in temperature. −0.0005 −0.0003 −1 −3 Collector-emitter voltage V 5 2SA1432 Safe Operating Area 100 ms ms* DC operation Ta = 25°C −10 −30 −100 −300 −1000 (V) CE ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SA1432 20070701-EN 2006-11-09 ...

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