2sc5700wb-tr-e Renesas Electronics Corporation., 2sc5700wb-tr-e Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
2sc5700wb-tr-e
Manufacturer Part Number
2sc5700wb-tr-e
Description
Transistors Silicon Npn Epitaxial Vhf/uhf Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC5700WB-TR-E.pdf
(9 pages)
2SC5700
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Forward transmission coefficient
Noise figure
Rev.1.00 Aug 10, 2005 page 2 of 8
Item
Symbol
V
|S
(BR)CBO
I
I
I
h
C
NF
CBO
CEO
EBO
f
21
FE
T
ob
|
2
Min
100
15
10
13
Typ
130
0.4
1.0
12
16
Max
200
170
0.1
0.7
1.7
1
GHz
Unit
nA
pF
dB
dB
V
A
A
I
V
V
V
V
V
f = 1 MHz
V
V
f = 900 MHz
V
f = 900 MHz,
Z
C
S
CB
CE
EB
CE
CB
CE
CE
CE
= 10 A, I
= Z
= 0.8 V, I
= 15 V, I
= 4 V, R
= 1 V, I
= 1 V, I
= 1V, I
= 1 V, I
= 1 V, I
L
Test conditions
= 50
C
C
E
C
C
E
BE
= 5 mA
E
= 0,
= 5 mA
= 5 mA,
= 5 mA,
C
= 0
= 0
= 0
=
(Ta = 25°C)