2sc5700wb-tr-e Renesas Electronics Corporation., 2sc5700wb-tr-e Datasheet - Page 3

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2sc5700wb-tr-e

Manufacturer Part Number
2sc5700wb-tr-e
Description
Transistors Silicon Npn Epitaxial Vhf/uhf Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC5700
Main Characteristics
Rev.1.00 Aug 10, 2005 page 3 of 8
100
80
60
40
20
1.0
0.8
0.6
0.4
0.2
50
40
30
20
10
0
0
0
Collector to Base Voltage V
Collector Power Dissipation Curve
Base to Emitter Voltage
Collector Output Capacitance vs.
Ambient Temperature
Typical Transfer Characteristics
V
CE
Collector to Base Voltage
0.4
0.2
= 1 V
50
0.4
0.8
100
0.6
1.2
I
f = 1 MHz
150
E
Ta (°C)
= 0
1.6
0.8
V
BE
CB
(V)
(V)
200
2.0
1
200
100
20
16
12
50
40
30
20
10
8
4
0
0
0
Collector to Emitter Voltage V
1
1
DC Current Transfer Ratio vs.
Typical Output Characteristics
Gain Bandwidth Product vs.
Collector Current
2
2
Collector Current I
1
Collector Current
Collector Current
450 µA
5
5
10
10
2
20
20
I
V
C
C
V
f = 2 GHz
CE
3
CE
(mA)
350 µA
(mA)
= 1 V
= 1 V
50
50
CE
(V)
100
100
4

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