2sc5700wb-tr-e Renesas Electronics Corporation., 2sc5700wb-tr-e Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
2sc5700wb-tr-e
Manufacturer Part Number
2sc5700wb-tr-e
Description
Transistors Silicon Npn Epitaxial Vhf/uhf Wide Band Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC5700WB-TR-E.pdf
(9 pages)
2SC5700
Rev.1.00 Aug 10, 2005 page 5 of 8
180°
–150°
0
–.2
150°
.2
100 to 2000 MHz (100 MHz Step)
Condition: V
–.4
100 to 2000 MHz (100 MHz Step)
Condition: V
.4
S
S
–120°
.2
11
12
120°
–.6
.6
Parameter vs. Frequency
Parameter vs. Frequency
( I
( I
.4
( I
( I
C
C
–.8
C
C
CE
= 5 mA)
= 20 mA)
.8
.6 .8 1
CE
= 5 mA)
= 20 mA)
= 1 V , Z
–90°
–1
90°
= 1 V , Z
1
1.5
O
Scale: 0.06 / div.
–1.5
2
1.5
O
= 50 Ω
–60°
60°
= 50 Ω
3 4 5
–2
2
3
10
–3
–30°
30°
4
–4
–5
5
–10
10
0°
180°
–150°
150°
0
–.2
.2
–.4
.4
S
100 to 2000 MHz (100 MHz Step)
Condition: V
100 to 2000 MHz (100 MHz Step)
Condition: V
21
–120°
S
.2
120°
22
Parameter vs. Frequency
–.6
.6
Parameter vs. Frequency
.4
–.8
( Ic = 5 mA)
( Ic = 20 mA)
.8
.6 .8 1
( I
( I
C
C
CE
–90°
CE
–1
90°
= 5 mA)
= 20 mA)
1
= 1 V , Z
= 1 V , Z
1.5
–1.5
Scale: 8 / div.
2
1.5
–60°
O
60°
O
3 4 5
= 50 Ω
= 50 Ω
–2
2
3
10
–3
–30°
30°
4
–4
5
–5
10
–10
0°