2sc5949 TOSHIBA Semiconductor CORPORATION, 2sc5949 Datasheet - Page 3

• Manufacturer Part Number: 2sc5949
• Description: Transistor Silicon Npn Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
500
300
100
10
20
16
12
50
30
10
1
0.03
8
4
0
5
0.01
0
−25
Tc = 100°C
25
Common emitter
V CE = 5 V
Common emitter
Tc = 25°C
Collector-emitter voltage V
0.1
2
Collector current I
Collector current I
500
0.3
0.1
4
I
hFE – I
C
f
400
T
– V
– I
6
1
C
CE
C
C
C
8
3
1
Common emitter
Tc = 25°C
V CE = 5 V
(A)
(A)
I
CE
B
= 20 mA
200
10
300
100
10
(V)
50
12
10
30
3
0.01
0.05
0.03
100
0.5
0.3
0.1
0.1
10
16
12
0.03
2
1
1
0.1
8
4
0
0
I C max (pulsed) *
*:Single non-repetitive pulse
Tc = 25°C
Curves must be de-rated
linearly with increase in
temperature.
Common emitter
V CE = 5 V
Common emitter
I C / I B = 10 V
I C max (continuous)
Collector-emitter voltage V
Base-emitter voltage V
0.1
Tc = 100°C
0.5
Collector current I
1
Safe operating area
0.3
DC operation
Tc = 25°C
V
1.0
CE (sat)
I
C
– V
Tc = 100°C
10
1
25
−25
BE
– I
1.5
V CEO max
C
3
C
BE
(A)
100
1 ms *
CE
−25
2.0
(V)
10 ms *
10
100 ms *
(V)
25
2006-11-16
2SC5949
1000
30
2.5