2sc6010 TOSHIBA Semiconductor CORPORATION, 2sc6010 Datasheet - Page 2

• Manufacturer Part Number: 2sc6010
• Description: Silicon Npn Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Switching time
Characteristics
C6010
Rise time
Storage time
Fall time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
V
V
Symbol
(BR) CBO
(BR) CEO
h
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
FE (3)
CBO
EBO
t
stg
t
t
r
f
V
V
I
I
V
V
V
I
I
I
DUTY CYCLE ≤ 1%
C
C
C
C
B1
CB
EB
CE
CE
CE
= 1 mA, I
= 10 mA, I
= 0.6 A, I
= 0.6 A, I
= 20 mA, −I
20 μs
= 600 V, I
= 8 V, I
= 5 V, I
= 5 V, I
= 5 V, I
2
B
B
B
C
C
C
C
INPUT
Test Condition
B
I
= 0
= 75 mA
= 75 mA
= 0
= 1 mA
= 0.1 A
= 0.2 A
B2
E
= 0
B2
= 0
= 50 mA
I
I
B21
B1
V
I
C
CC
≈ 200 V
OUT-
PUT
600
285
100
Min
80
60
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Typ.
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2006-11-13
2SC6010
Max
0.24
100
100
200
200
1.0
1.3
0.4
3.0
―
―
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Unit
μA
μA
μs
V
V
V
V