2sc6072 TOSHIBA Semiconductor CORPORATION, 2sc6072 Datasheet

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2sc6072

Manufacturer Part Number
2sc6072
Description
Toshiba Multi-chip Device Silicon Npn Epitaxial Transistor Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC6072
Manufacturer:
toshiba
Quantity:
30 000
Power Amplifier Applications
Driver Stage Amplifier Applications
・High transition frequency: f
Absolute Maximum Ratings
Electrical Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
Characteristic
TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type
Ta = 25°C
Tc = 25°C
T
= 200 MHz (typ.)
(Ta = 25°C)
(Ta = 25°C)
Symbol
V
V
V
V
V
T
Symbol
h
h
2SC6072
P
CBO
CEO
EBO
(BR) CEO
I
I
T
CE (sat)
stg
I
C
B
I
FE
FE
V
C
CBO
C
EBO
j
f
BE
T
ob
(1)
(2)
V
V
I
V
V
I
V
V
V
− 55~150
C
C
CB
EB
CE
CE
CE
CE
CB
Rating
= 10 mA, I
= 1 A, I
180
180
150
1
2.0
1.0
2.0
20
5
= 5 V, I
= 180 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
B
Test Conditions
= 0.1 A
C
C
C
C
C
B
E
= 0
= 0.1 A
= 1 A
= 1 A
= 0.3 A
E
= 0
= 0, f = 1MHz
Unit
= 0
°C
°C
W
W
V
V
V
A
A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
180
100
50
1: BASE
2: COLLECTOR
3: EMITTER
Typ.
200
16
2-10U1A
SC-67
2009-12-21
2SC6072
Max
320
5.0
5.0
1.0
1.5
Unit: mm
MHz
Unit
μA
μA
pF
V
V
V

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2sc6072 Summary of contents

Page 1

... I CE (sat 0 1MHz 2SC6072 BASE 2: COLLECTOR V 3: EMITTER A JEDEC ― A JEITA SC-67 TOSHIBA 2-10U1A Weight: 1.7 g (typ.) Min Typ. Max ⎯ ⎯ 5.0 ⎯ ⎯ 5.0 ⎯ ⎯ ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SC6072 2009-12-21 ...

Page 3

... Single non-repetitive pulse 30 1 0.2 (V) 1 Common emitter β=10 Single non-repetitive pulse 0.1 0.01 0.001 1 10 0.001 10 3 2SC6072 I – 100℃ −25℃ 25℃ 1.0 0.4 0.6 0.8 1.2 Base-emitter voltage V ( – (sat 100°C 25°C −25°C 0.01 0.1 1 ...

Page 4

... CE r – 0 Pulse width t ( ② CEO max 1000 (V) 4 2SC6072 ② ① 100 1000 P – ① Tc=Ta Infinite heat sink ② No heat sink ① 140 100 120 160 Ambient temperature Ta (°C) 2009-12-21 ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SC6072 2009-12-21 ...

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