2sc6100 TOSHIBA Semiconductor CORPORATION, 2sc6100 Datasheet - Page 3

• Manufacturer Part Number: 2sc6100
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
2.5
1.5
0.5
0.1
0.001
3
2
1
0
1
3
2
1
0
0
0
Common emitter
I C /I B = 50
Single nonrepetitive
pulse
Common emitter
V CE = 2 V
Single nonrepetitive
pulse
Collector-emitter voltage V
0.2
Base-emitter voltage V
70
0.01
Ta = 100°C
0.4
Collector current I
Ta = 100°C
V
0.4
CE (sat)
I
I
60
C
C
– V
– V
0.1
0.8
Common emitter
Ta = 25°C
Single nonrepetitive pulse
CE
BE
– I
0.6
50
C
25
C
BE
−55
25
CE
(A)
1.2
1
(V)
0.8
−55
(V)
I B = 1 mA
40
30
20
10
5
1.6
10
1
3
10000
1000
100
0.1
10
0.001
10
0.001
1
Common emitter
I C /I B = 50
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive
pulse
25
0.01
0.01
Collector current I
Collector current I
Ta = 100°C
Ta = −55°C
V
25
BE (sat)
−55
h
FE
0.1
0.1
– I
– I
C
100
C
C
C
(A)
(A)
1
1
2009-01-14
2SC6100
10
10