hn7g02fu TOSHIBA Semiconductor CORPORATION, hn7g02fu Datasheet

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hn7g02fu

Manufacturer Part Number
hn7g02fu
Description
Toshiba Multi Chip Discrete Device
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Power Management Switch Application, Inverter Circuit
Application, Driver Circuit Application and Interface
Circuit Application.
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Q2 (MOS-FET) Absolute Maximum Ratings
Q1, Q2 Common Ratings
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Drain-source voltage
Gate-source voltage
DC drain current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Note 1: Total rating
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
Characteristics
Characteristics
(Ta = 25°C)
TOSHIBA Multi Chip Discrete Device
Symbol
Symbol
Symbol
HN7G02FU
V
V
V
V
V
T
P
CBO
CEO
EBO
GSS
I
I
(Note 1)
T
DS
stg
C
D
C
j
−55~150
Rating
Rating
Rating
−100
−50
−50
200
150
−5
20
10
50
1
(Ta = 25°C)
Unit
Unit
Unit
mW
mA
mA
°C
°C
V
V
V
V
V
Marking
Equivalent Circuit
Weight:
JEDEC
JEITA
TOSHIBA
Q1
6
1
F T
5
2
g (typ.)
Q2
4
3
HN7G02FU
2007-11-01
(top view)
Unit: mm

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hn7g02fu Summary of contents

Page 1

... Rating Unit GSS (Ta = 25°C) Symbol Rating Unit P C 200 mW (Note 1) T 150 j −55~150 T stg 1 HN7G02FU JEDEC ― JEITA ― V TOSHIBA ― V Weight: g (typ.) Marking F T °C °C Equivalent Circuit 2007-11-01 ...

Page 2

... V DSS 0 ⎪Y ⎪ 2 (ON HN7G02FU Min Typ. Max Unit ⎯ ⎯ −100 nA ⎯ ⎯ −100 nA ⎯ 120 400 ⎯ −0.1 −0.3 V 3.29 4.7 6.11 kΩ Min Typ. Max Unit ⎯ ...

Page 3

... Common emitter −5 V −0.01 −0.1 −10 −30 −100 (mA) 3 HN7G02FU I – (OFF 100°C −25 Common emitter −5 V −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 −1.6 Input voltage V ...

Page 4

... DS 50 Common source 25° 100° 0.5 0.3 S 0.1 0.05 0.03 0.01 −1.4 −1.6 −1 HN7G02FU 2.5 V 90 (ON off I – V (低電圧領域 Common source Ta = 25°C 1.1 1.2 1. 1.0 V ...

Page 5

... Drain-source voltage V 1000 t on 100 2 μ 100 0.3 140 160 5 HN7G02FU C – Common source MHz Ta = 25°C C iss C oss C rss 0 ( – off D.U. < OUT < ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 HN7G02FU 2007-11-01 ...

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