hn7g11f TOSHIBA Semiconductor CORPORATION, hn7g11f Datasheet - Page 3

• Manufacturer Part Number: hn7g11f
• Description: Toshiba Multichip Discrete Device
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
-300
-200
-100
-10000
-1000
-0
-100
-10
-1
-0
-0.1
-1000
Common emitter
Ta=25℃
-100
-10
-1
Common emitter
Ta=25℃
V
CE
-1
=-2V
-0.2
Common emitter
Ta=25℃
I
Collector - emitter voltage V
C
/I
B
=20
Base - emitter voltage V
-10
-0.4
V
I
CE(sat)
I
C
C
Collector current IC (mA)
- V
- V
CE
- I
BE
-1
-0.6
-100
C
CE
(V)
BE
-0.8
I
B
(V)
=-0.5mA
-1000
I
B
=-1mA
-1
I
I
B
I
I
I
B
=-0.3mA
B
B
=-1mA
B
=-0.1mA
=-0.4mA
=-0.2mA
-10000
-10
3
1000
-100
100
-10
10
-1
-10000
-0.1
-1000
-1
-100
Common emitter
Ta=25℃
V
Common emitter
Ta=25℃
V
CE
CE
-1
=-2V
=-2V
Common emitter
Ta=25℃
I
C
/I
B
=30
-10
Base - emitter voltage V
-10
Collector current I
Collector current I
V
BE(sat)
I
h
B
FE
- V
- I
-100
- I
BE
-1
C
-100
C
C
(mA)
C
(mA)
BE
HN7G11F
2009-08-04
-1000
(V)
-1000
-10000
-10000
-10