2sa2069 TOSHIBA Semiconductor CORPORATION, 2sa2069 Datasheet - Page 2

• Manufacturer Part Number: 2sa2069
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Figure 1
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
I
B1
Duty cycle < 1%
20 μs
Characteristics
Switching Time Test Circuit &
Timing Chart
Rise time
Storage time
Fall time
I
B2
Input
I
I
B1
B2
(Ta = 25°C)
V
V
CC
V
V
Symbol
h
h
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
C
EBO
t
stg
Output
t
t
ob
r
f
(1)
(2)
V
V
I
V
V
I
I
V
See Figure 1.
V
−I
C
C
C
CB
EB
CE
CE
CB
CC
B1
= −10 mA, I
= −0.5 A, I
= −0.5 A, I
2
= −7 V, I
= −20 V, I
= −2 V, I
= −2 V, I
= −10 V, I
≈ −10 V, R
= I
B2
Marking
Test Condition
= −17 mA
Lot No.
B
B
C
C
C
B
E
E
= −17 mA
= −17 mA
= 0
= −0.15 A
= −0.5 A
L
= 0
= 0
= 0, f = 1 MHz
= 20 Ω
4
D
Min
−20
200
125
―
―
―
―
―
―
―
―
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Typ.
135
12
40
37
―
―
―
―
―
―
―
2006-11-09
−0.14
−1.10
−100
−100
2SA2069
Max
500
―
―
―
―
―
―
Unit
nA
nA
pF
ns
V
V
V