2sa2154ct TOSHIBA Semiconductor CORPORATION, 2sa2154ct Datasheet - Page 2

• Manufacturer Part Number: 2sa2154ct
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

-1000
-100
-0.1
-0.01
-120
-100
-10
-0.1
-80
-60
-40
-20
-1
-0
-1
0
-0
-0.1
0
-0
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
-2.0
COMMON EMITTER
Common emitter
I
IC/IB=10
Ta = 100℃
C
-0.2
/I
-1
B
Collector-emitter voltage V
BASE-EMITTER VOLTAGE VBE (V)
Base-emitter voltage V
= 10
COLLECTOR CURRENT IC (mA)
Collector current I
25
-0.4
COMMON EMITTER Ta=25℃
Common emitter
-2
-1
-1.5
VCE(sat) - IC
V
CE (sat)
IB -VBE
-0.6
I
IC - VCE
Ta = 100℃
B
-3
I
C
– V
– V
BE
-0.8
Common emitter
COMMON EMITTER
V
VCE=−6V
– I
CE
CE
-4
C
C
Ta = 25°C
-25
-25
= −6 V
BE
-10
(mA)
-1
CE
-5
IB = -0.1mA
(V)
I
25
B
-1.0
-0.7
-0.5
-0.3
-0.2
= −0.1 mA
(V)
-1.2
-6
-1.4
-100
-7
2
1000
150
140
130
120
110
100
-0.1
100
-10
90
80
70
60
50
40
30
20
10
10
-1
0
-0.1
-0.1
0
Common emitter
COMMON EMITTER
Common emitter
I
20
C
VCE=−6V
COMMON EMITTER
IC/IB=10
/I
AMBIENT TEMPERATURE Ta (°C)
VCE=−1V
B
Ambient temperature Ta (°C)
Ta = 100℃
= 10
COLLECTOR CURRENT IC (mA)
Collector current I
COLLECTOR CURRENT IC (mA)
Collector current I
40
V
V
(10 mm × 10 mm × 1 mmt)
CE
CE
Mounted on FR4 board
-25
= −6 V
= −1 V
-1
-1
VBE(sat) - IC
60
V
BE (sat)
hFE - IC
P
PC- Ta
h
C
FE
25
– Ta
80
– I
– I
C
C
100
C
C
-10
-10
(mA)
(mA)
2SA2154CT
120
2009-04-13
140
-100
-100
160