2sa2190 TOSHIBA Semiconductor CORPORATION, 2sa2190 Datasheet
2sa2190
Manufacturer Part Number
2sa2190
Description
Toshiba Multi-chip Device Silicon Pnp Epitaxial Transistor Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SA2190.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SA2190
Manufacturer:
toshiba
Quantity:
30 000
Power Amplifier Applications
Driver Stage Amplifier Applications
・High transition frequency: f
Absolute Maximum Ratings
Electrical Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristic
Characteristic
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type
Ta = 25°C
Tc = 25°C
T
= 200 MHz (typ.)
(Tc = 25°C)
(Tc = 25°C)
Symbol
V
V
V
V
V
T
Symbol
h
h
2SA2190
P
CBO
CEO
EBO
(BR) CEO
I
I
T
CE (sat)
stg
I
C
B
I
FE
FE
V
C
CBO
C
EBO
j
f
BE
T
ob
(1)
(2)
V
V
I
V
V
I
V
V
V
− 55~150
C
C
CB
EB
CE
CE
CE
CE
CB
Rating
− 180
− 180
− 2.0
− 1.0
= − 10 mA, I
= − 1 A, I
150
1
− 5
2.0
20
= − 5 V, I
= − 180 V, I
= − 5 V, I
= − 5 V, I
= − 5 V, I
= − 5 V, I
= − 10 V, I
Test Conditions
B
= − 0.1 A
C
C
C
C
C
B
E
= 0
= − 0.1 A
= − 1 A
= − 1 A
= − 0.3 A
Unit
= 0
E
= 0, f = 1MH
°C
°C
W
W
V
V
V
A
A
= 0
Z
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
− 180
Min
100
50
⎯
⎯
⎯
⎯
⎯
⎯
1 : BASE
2 : COLLECTOR
3 : EMITTER
− 0.24
Typ.
200
26
⎯
⎯
⎯
⎯
⎯
⎯
2-10U1A
SC-67
2007-06-07
―
− 5.0
− 5.0
− 1.5
2SA2190
−1.0
Max
320
⎯
⎯
⎯
⎯
Unit: mm
MH
Unit
μA
μA
pF
V
V
V
Z
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2sa2190 Summary of contents
Page 1
... − − − 0 − 1MH 2SA2190 1 : BASE 2 : COLLECTOR 3 : EMITTER JEDEC ― JEITA SC-67 TOSHIBA 2-10U1A Weight: 1.7 g (typ.) Min Typ. Max = 0 ⎯ ⎯ − 5.0 ⎯ ⎯ − 5.0 − 180 ⎯ ...
Page 2
... Marking Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2SA2190 2007-06-07 ...
Page 3
... − −8 −10 −0.2 0 (V) −1 Common emitter β=10 Single non-repetitive pulse −0 100°C −0.01 −0.001 −0.001 −10 −10 3 2SA2190 I – 100℃ −25℃ 25℃ −0.4 −0.6 −0.8 −1.0 −1.2 Base-emitter voltage V ( – I ...
Page 4
... Pulse width t ( 100 ms ② CEO MAX. −1000 (V) 4 2SA2190 ② ① 100 1000 P – ① Tc=Ta Infinite heat sink ② No heat sink ① 100 140 160 120 Ambient temperature Ta (°C) 2007-06-07 ...
Page 5
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SA2190 20070701-EN 2007-06-07 ...