2sc2714 TOSHIBA Semiconductor CORPORATION, 2sc2714 Datasheet
2sc2714
Manufacturer Part Number
2sc2714
Description
Toshiba Transistor Silicon Npn Epitaxial Planar Type Pct Process
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.2SC2714.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC2714
Manufacturer:
toshiba
Quantity:
30 000
Company:
Part Number:
2SC2714
Manufacturer:
TOSHIBA
Quantity:
42 000
Company:
Part Number:
2SC2714
Manufacturer:
TOSHIBA
Quantity:
3 400
Part Number:
2SC2714
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2sc2714-02 (QO)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
2sc2714-O
Manufacturer:
TOSHIBA
Quantity:
54 000
Part Number:
2sc2714-O
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
2sc2714-OLT1/9018/J8
Manufacturer:
CJ/长电
Quantity:
20 000
Part Number:
2sc2714-QY
Manufacturer:
TOS接带
Quantity:
20 000
Company:
Part Number:
2sc2714-Y
Manufacturer:
TOSHIBA
Quantity:
48 000
High Frequency Amplifier Applications
FM, RF, MIX,IF Amplifier Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
Small reverse transfer capacitance: C
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE
Characteristics
Characteristics
classification R: 40~80, O: 70~140, Y: 100~200
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
(Ta = 25°C)
(Ta = 25°C)
Symbol
Symbol
C
re
V
V
V
I
I
T
c
G
CBO
EBO
h
C
P
NF
CBO
CEO
EBO
I
I
･
T
f
stg
FE
C
B
T
pe
= 0.7 pF (typ.)
re
rbb’
C
2SC2714
j
(Note)
V
V
V
V
V
V
V
Figure 1
CB
EB
CE
CB
CE
CE
CE
−55~125
Rating
= 18 V, I
= 4 V, I
= 6 V, I
= 6 V, f = 1 MHz
= 6 V, I
= 6 V, I
= 6 V, I
100
125
40
30
20
4
4
1
C
C
C
E
E
Test Condition
E
= 0
= −1 mA, f = 30 MHz
= −1 mA, f = 100 MHz,
= 1 mA
= 1 mA
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
40
17
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.70
550
2.5
23
⎯
⎯
⎯
⎯
2-3F1A
SC-59
2007-11-01
2SC2714
―
Max
200
0.5
0.5
5.0
30
⎯
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
dB
dB
ps
Related parts for 2sc2714
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2sc2714 Summary of contents
Page 1
... −1 mA MHz C rbb’ ･ −1 mA 100 MHz Figure 2SC2714 JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Min Typ. Max ⎯ ⎯ 0.5 ⎯ ⎯ 0.5 ⎯ 40 200 ⎯ ...
Page 2
... C 1 −1 mA 100 MHz) E Symbol Typ. Unit − ⎪y ⎪ 0. θ −105 ° θ 165 ° fb μ 1 2SC2714 2007-11-01 ...
Page 3
... Marking 3 2SC2714 2007-11-01 ...
Page 4
... 4 2SC2714 2007-11-01 ...
Page 5
... 5 2SC2714 2007-11-01 ...
Page 6
... 6 2SC2714 2007-11-01 ...
Page 7
... 7 2SC2714 2007-11-01 ...
Page 8
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2SC2714 20070701-EN GENERAL 2007-11-01 ...