2n7002ka NXP Semiconductors, 2n7002ka Datasheet - Page 5

• Manufacturer Part Number: 2n7002ka
• Description: 2n7002ka N-channel Trenchmos Fet
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
2N7002KA_2
Product data sheet
Symbol
Static characteristics
V
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
Source-drain diode
V
t
Q
DSS
GSS
on
off
rr
j
(BR)DSS
(BR)GSS
GS(th)
SD
DSon
iss
oss
rss
r
= 25 C unless otherwise specified.
Parameter
drain-source breakdown
voltage
gate-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
source-drain voltage
reverse recovery time
recovered charge
Characteristics
Conditions
I
I
V
V
V
V
V
see
V
R
I
I
V
D
G
D
S
S
DS
GS
GS
GS
GS
DS
DS
G
T
T
T
T
T
T
T
T
T
= 10 A; V
= 1 mA; V
= 300 mA; V
= 300 mA; dI
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 50 ; R
Figure 12
= 48 V; V
= 10 V; V
= 10 V; I
= 4.5 V; I
= 0 V; V
= 50 V; R
= 25 V
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
Rev. 02 — 25 September 2007
DS
DS
D
GS
GS
D
DS
GS
L
= 500 mA; see
GS
DS
S
= V
= 75 mA; see
= 250 ; V
= 10 V; f = 1 MHz;
= 0 V
= 50
/dt = 100 A/ s; V
= 0 V
= 0 V
= 0 V; see
= 0 V
GS
; see
GS
Figure 9
Figure 11
= 10 V;
Figure 6
Figure 6
GS
and
= 0 V;
and
and
10
8
8
N-channel TrenchMOS FET
Min
60
55
16
1
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2N7002KA
22
50
9
30
Typ
75
-
2
-
-
0.01
-
2.8
-
3.8
13
8
4
3
0.85
30
© NXP B.V. 2007. All rights reserved.
Max
-
-
-
-
-
3.5
1
10
500
4.4
8.14
5.3
40
30
10
10
15
1.5
-
-
Unit
V
V
V
V
V
V
nA
pF
pF
pF
ns
ns
V
ns
nC
5 of 11
A
A