ssm6n15afu TOSHIBA Semiconductor CORPORATION, ssm6n15afu Datasheet
ssm6n15afu
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ssm6n15afu Summary of contents
Page 1
... GSS I 100 400 DP P (Note 1) 300 150 °C ch −55 to 150 T °C stg 2 × 6) Equivalent Circuit (top view SSM6N15AFU V V 1.Source1 US6 2.Gate1 3.Drain2 JEDEC ― JEITA SC-88 TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) 2010-11-22 Unit: mm 4.Source2 5.Gate2 6.Drain1 ...
Page 2
... GS ( OUT ( OUT requires higher voltage than V GS (on) < V < (off) th vary depending on board material, board area, board thickness D 2 SSM6N15AFU Min Typ ⎯ 30 ⎯ = -10 V (Note ⎯ ⎯ ⎯ ⎯ ⎯ 0.8 ⎯ ...
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... Gate-source voltage 4 400 Gate-source voltage V 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 3 SSM6N15AFU I – − 25 °C Common source Pulse test 1.0 2.0 3.0 4.0 ( – (ON Common source Pulse test 25 ° 100 °C − ...
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... Drain-source voltage V 1000 t off 100 iss oss C rss 100 1 (V) 2 × 6) 160 4 SSM6N15AFU I – Common source Pulse test −25 °C S –0.5 –1.0 –1.5 ( – Common source ° ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N15AFU 2010-11-22 ...