ssm6n15afu TOSHIBA Semiconductor CORPORATION, ssm6n15afu Datasheet

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ssm6n15afu

Manufacturer Part Number
ssm6n15afu
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Load Switching Applications
Absolute Maximum Ratings
(Q1, Q2 Common)
Marking
2.5 V drive
N-ch 2-in-1
Low ON-resistance: R
Drain-Source voltage
Gate-Source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Total rating
6
1
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.32mm
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
DI
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
5
2
0.4 mm
R
4
3
DS(ON)
DS(ON)
DC
Pulse
= 3.6 Ω (max) (@V
= 6.0 Ω (max) (@V
Equivalent Circuit
SSM6N15AFU
(Ta = 25°C)
P
Symbol
D
V
V
T
I
T
GSS
DSS
I
DP
(Note 1)
6
1
stg
D
ch
Q1
GS
GS
5
2
−55 to 150
= 4.0 V)
= 2.5 V)
Rating
±20
100
400
300
150
Q2
30
1
2
× 6)
4
3
(top view)
Unit
mW
mA
°C
°C
V
V
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
US6
1.Source1
2.Gate1
3.Drain2
SSM6N15AFU
2-2J1C
SC-88
2010-11-22
4.Source2
5.Gate2
6.Drain1
Unit: mm

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ssm6n15afu Summary of contents

Page 1

... GSS I 100 400 DP P (Note 1) 300 150 °C ch −55 to 150 T °C stg 2 × 6) Equivalent Circuit (top view SSM6N15AFU V V 1.Source1 US6 2.Gate1 3.Drain2 JEDEC ― JEITA SC-88 TOSHIBA 2-2J1C Weight: 6.8 mg (typ.) 2010-11-22 Unit: mm 4.Source2 5.Gate2 6.Drain1 ...

Page 2

... GS ( OUT ( OUT requires higher voltage than V GS (on) < V < (off) th vary depending on board material, board area, board thickness D 2 SSM6N15AFU Min Typ ⎯ 30 ⎯ = -10 V (Note ⎯ ⎯ ⎯ ⎯ ⎯ 0.8 ⎯ ...

Page 3

... Gate-source voltage 4 400 Gate-source voltage V 2.0 1.0 0 −50 150 Ambient temperature Ta (°C) 3 SSM6N15AFU I – − 25 °C Common source Pulse test 1.0 2.0 3.0 4.0 ( – (ON Common source Pulse test 25 ° 100 °C − ...

Page 4

... Drain-source voltage V 1000 t off 100 iss oss C rss 100 1 (V) 2 × 6) 160 4 SSM6N15AFU I – Common source Pulse test −25 °C S –0.5 –1.0 –1.5 ( – Common source ° ...

Page 5

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N15AFU 2010-11-22 ...

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