ssm6n7002fu TOSHIBA Semiconductor CORPORATION, ssm6n7002fu Datasheet
ssm6n7002fu
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ssm6n7002fu Summary of contents
Page 1
... V GSS I 200 D I 800 DP P (Note 1) 300 150 ch −55~150 T stg 2 × 6) Equivalent Circuit SSM6N7002FU °C 1.SOURCE1 4.SOURCE2 °C 2.GATE1 5.GATE2 3.DRAIN2 6.DRAIN1 JEDEC ― JEITA ― TOSHIBA 2-2J1C (top view 2007-11-01 Unit: mm ...
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... V ( OUT (c) V OUT (ON) requires higher voltage than V GS (on) < < (off SSM6N7002FU Min Typ Max ⎯ ⎯ ± ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 2.5 ⎯ ⎯ 170 ⎯ 2.0 3.0 ⎯ ...
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... Gate-Source voltage VGS (V) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 125 150 -25 0 Ambient temperature Ta (°C) 3 SSM6N7002FU ID - VGS -25° RDS(ON) - VGS Common Source ID=100mA Ta=100°C 25°C -25° Vth - Ta Common Source ID=0.25mA VDS=10V 100 125 150 ...
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... Ciss 100 td(off) Coss 10 Crss td(on 100 1 2 ×6） 4 SSM6N7002FU IDR - VDS D G IDR S -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 Drain-Source voltage VDS ( Common Source VDD=30V tf VGS=0~10V Ta=25° 100 1000 Drain current ID (mA) 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N7002FU 20070701-EN GENERAL 2007-11-01 ...